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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFS7787PBFMOSFET N-CH 75V 76A D2PAK Infineon Technologies |
3,807 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 76A (Tc) | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109 nC @ 10 V | ±20V | 4020 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
|
BSB012NE2LXIXUMA1MOSFET N-CH 25V 170A 2WDSON Infineon Technologies |
3,248 |
|
Tabla de datos |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 170A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | 2V @ 250µA | 82 nC @ 10 V | ±20V | 5852 pF @ 12 V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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AUIRFN8401TRMOSFET N-CH 40V 84A PQFN Infineon Technologies |
3,531 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 84A (Tc) | 10V | 4.6mOhm @ 50A, 10V | 3.9V @ 50µA | 66 nC @ 10 V | ±20V | 2170 pF @ 25 V | - | 4.2W (Ta), 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
AUIRFS4115MOSFET N-CH 150V 99A D2PAK Infineon Technologies |
2,696 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 99A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRFSL4115MOSFET N-CH 150V 99A TO262 Infineon Technologies |
3,888 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 99A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRFH4209DTRPBFMOSFET N-CH 25V 44A/260A PQFN Infineon Technologies |
3,352 |
|
Tabla de datos |
FASTIRFET™, HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 44A (Ta), 260A (Tc) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2.1V @ 100µA | 74 nC @ 10 V | ±20V | 4620 pF @ 13 V | - | 3.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
IRFP7718PBFMOSFET N-CH 75V 195A TO247AC Infineon Technologies |
3,097 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3.7V @ 250µA | 830 nC @ 10 V | ±20V | 29550 pF @ 25 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
IRFS4321-7PPBFMOSFET N-CH 150V 86A D2PAK Infineon Technologies |
3,428 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 150 V | 86A (Tc) | 10V | 14.7mOhm @ 34A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 4460 pF @ 50 V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IRFU7540PBFMOSFET N-CH 60V 90A IPAK Infineon Technologies |
2,847 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 6V, 10V | 4.8mOhm @ 66A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4360 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
|
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IRFU7546PBFMOSFET N-CH 60V 56A IPAK Infineon Technologies |
4,954 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 56A (Tc) | 6V, 10V | 7.9mOhm @ 43A, 10V | 3.7V @ 100µA | 87 nC @ 10 V | ±20V | 3020 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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