制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPA60R460CEXKSA1MOSFET N-CH 600V 9.1A TO220-FP Infineon Technologies |
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CoolMOS™ CE | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 9.1A (Tc) | 10V | 460mOhm @ 3.4A, 10V | 3.5V @ 280µA | 28 nC @ 10 V | ±20V | 620 pF @ 100 V | - | 30W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPA60R800CEXKSA1MOSFET N-CH 600V 5.6A TO220-FP Infineon Technologies |
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CoolMOS™ CE | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.6A (Tc) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | - | 27W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPA80R1K4CEXKSA1MOSFET N-CH 800V 2.8A TO220 Infineon Technologies |
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CoolMOS™ CE | TO-220-3 Full Pack | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 2.8A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23 nC @ 10 V | ±20V | 570 pF @ 100 V | - | 31W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPA80R460CEXKSA1MOSFET N-CH 800V 5A TO220 Infineon Technologies |
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CoolMOS™ CE | TO-220-3 Full Pack | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 5A (Tc) | 10V | 460mOhm @ 7.1A, 10V | 3.9V @ 680µA | 64 nC @ 10 V | ±20V | 1600 pF @ 100 V | - | 34W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPA80R650CEXKSA1MOSFET N-CH 800V 4.5A TO220 Infineon Technologies |
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CoolMOS™ CE | TO-220-3 Full Pack | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.5A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 45 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 33W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPU60R1K0CEBKMA1MOSFET N-CH 600V 4.3A TO251 Infineon Technologies |
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CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 37W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 |
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IPU60R1K5CEBKMA1MOSFET N-CH 600V 3.1A TO251 Infineon Technologies |
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CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.1A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4 nC @ 10 V | ±20V | 200 pF @ 100 V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 |
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IRFHM7194TRPBFMOSFET N-CH 100V 9.3A/34A 8PQFN Infineon Technologies |
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FASTIRFET™, HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.3A (Ta), 34A (Tc) | 10V | 16.4mOhm @ 20A, 10V | 3.6V @ 50µA | 19 nC @ 10 V | ±20V | 733 pF @ 50 V | - | 2.8W (Ta), 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3.3x3.3), Power33 |
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AUIRLZ24NSTRLMOSFET N-CH 55V 18A D2PAK Infineon Technologies |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF3707ZSTRLPBFMOSFET N-CH 30V 59A D2PAK Infineon Technologies |
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HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 25µA | 15 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |