制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRFHM8228TRPBFMOSFET N-CH 25V 19A 8PQFN Infineon Technologies |
3,954 | - |
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HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 19A (Ta) | 4.5V, 10V | 5.2mOhm @ 20A, 10V | 2.35V @ 25µA | 18 nC @ 10 V | ±20V | 1667 pF @ 10 V | - | 2.8W (Ta), 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3.3x3.3), Power33 |
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IPP50R399CPXKSA1MOSFET N-CH 500V 9A TO220-3 Infineon Technologies |
3,995 | - |
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CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 9A (Ta) | 10V | 399mOhm @ 4.9A, 10V | 3.5V @ 330µA | 4 nC @ 10 V | ±20V | 890 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRFS7530-7PPBFMOSFET N CH 60V 240A D2PAK Infineon Technologies |
4,424 | - |
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HEXFET®, StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.7V @ 250µA | 354 nC @ 10 V | ±20V | 12960 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IRFS7530PBFMOSFET N-CH 60V 195A D2PAK Infineon Technologies |
2,971 | - |
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HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 411 nC @ 10 V | ±20V | 13703 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFS7534-7PPBFMOSFET N CH 60V 240A D2PAK Infineon Technologies |
2,584 | - |
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HEXFET®, StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 6V, 10V | 1.95mOhm @ 100A, 10V | 3.7V @ 250µA | 300 nC @ 10 V | ±20V | 9990 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IRFS7534PBFMOSFET N CH 60V 195A D2PAK Infineon Technologies |
2,005 | - |
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HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 6V, 10V | 2.4mOhm @ 100A, 10V | 3.7V @ 250µA | 279 nC @ 10 V | ±20V | 10034 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFS7537PBFMOSFET N CH 60V 173A D2PAK Infineon Technologies |
3,277 | - |
|
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HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFS7540PBFMOSFET N CH 60V 110A D2PAK Infineon Technologies |
2,369 | - |
|
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HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4555 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRFS4115-7PMOSFET N-CH 150V 105A D2PAK Infineon Technologies |
4,067 | - |
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HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 5320 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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AUIRFS4115-7TRLMOSFET N-CH 150V 105A D2PAK Infineon Technologies |
4,234 | - |
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HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 105A (Tc) | 10V | 11.8mOhm @ 63A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 5320 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |