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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFU7740PBFMOSFET N-CH 75V 87A IPAK Infineon Technologies |
2,225 |
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Tabla de datos |
HEXFET®, StrongIRFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 87A (Tc) | 6V, 10V | 7.2mOhm @ 52A, 10V | 3.7V @ 100µA | 126 nC @ 10 V | ±20V | 4430 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRFU7746PBFMOSFET N-CH 75V 56A IPAK Infineon Technologies |
3,266 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89 nC @ 10 V | ±20V | 3107 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK (TO-251AA) |
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IRLS3813PBFMOSFET N-CH 30V 160A D2PAK Infineon Technologies |
4,654 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 160A (Tc) | 10V | 1.95mOhm @ 148A, 10V | 2.35V @ 150µA | 83 nC @ 4.5 V | ±20V | 8020 pF @ 25 V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRF1405ZS-7PMOSFET N-CH 55V 120A D2PAK Infineon Technologies |
2,778 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 120A (Tc) | 10V | 4.9mOhm @ 88A, 10V | 4V @ 150µA | 230 nC @ 10 V | ±20V | 5360 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
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IRFH7194TRPBFMOSFET N-CH 100V 11A/35A 8PQFN Infineon Technologies |
3,041 |
|
Tabla de datos |
FASTIRFET™, HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 35A (Tc) | 10V | 16.4mOhm @ 21A, 10V | 3.6V @ 50µA | 19 nC @ 10 V | ±20V | 733 pF @ 50 V | - | 3.6W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFI7440GPBFMOSFET N-CH 40V 95A TO220AB FP Infineon Technologies |
4,870 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | 10V | 2.5mOhm @ 57A, 10V | 3.9V @ 100µA | 132 nC @ 10 V | ±20V | 4549 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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IRL8114PBFMOSFET N-CH 30V 90A TO220AB Infineon Technologies |
3,272 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 4.5mOhm @ 40A, 10V | 2.25V @ 250µA | 29 nC @ 4.5 V | ±20V | 2660 pF @ 15 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPA80R1K0CEXKSA1MOSFET N-CH 800V 3.6A TO220 Infineon Technologies |
4,586 |
|
Tabla de datos |
CoolMOS™ CE | TO-220-3 Full Pack | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 3.6A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31 nC @ 10 V | ±20V | 785 pF @ 100 V | - | 32W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
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IPA80R310CEXKSA1MOSFET N-CH 800V 6.8A TO220 Infineon Technologies |
2,686 |
|
Tabla de datos |
CoolMOS™ CE | TO-220-3 Full Pack | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.8A (Tc) | - | 310mOhm @ 11A, 10V | 3.9V @ 1mA | 91 nC @ 10 V | - | 2320 pF @ 100 V | - | 35W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPS65R1K5CEAKMA1MOSFET N-CH 650V 3.1A TO251 Infineon Technologies |
3,676 |
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Tabla de datos |
CoolMOS™ CE | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.1A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 225 pF @ 100 V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 |
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