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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFH7787TRPBFMOSFET N-CH 75V 68A PQFN Infineon Technologies |
2,662 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 68A (Tc) | 6V, 10V | 8mOhm @ 41A, 10V | 3.7V @ 100µA | 110 nC @ 10 V | ±20V | 4030 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
|
IRFSL7730PBFMOSFET N-CH 75V 195A TO262 Infineon Technologies |
2,048 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407 nC @ 10 V | ±20V | 13660 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRFSL7734PBFMOSFET N-CH 75V 183A TO262 Infineon Technologies |
3,256 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10150 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRFR7740PBFMOSFET N-CH 75V 87A DPAK Infineon Technologies |
2,137 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 87A (Tc) | 6V, 10V | 7.2mOhm @ 52A, 10V | 3.7V @ 100µA | 126 nC @ 10 V | ±20V | 4430 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRFR7746PBFMOSFET N-CH 75V 56A DPAK Infineon Technologies |
4,917 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 56A (Tc) | 6V, 10V | 11.2mOhm @ 35A, 10V | 3.7V @ 100µA | 89 nC @ 10 V | ±20V | 3107 pF @ 25 V | - | 99W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRFS7730-7PPBFMOSFET N-CH 75V 240A D2PAK Infineon Technologies |
4,171 |
|
Tabla de datos |
StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 240A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.7V @ 250µA | 428 nC @ 10 V | ±20V | 13970 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
IRFS7730PBFMOSFET N-CH 75V 195A D2PAK Infineon Technologies |
4,104 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407 nC @ 10 V | ±20V | 13660 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
|
IRFS7734-7PPBFMOSFET N-CH 75V 197A D2PAK Infineon Technologies |
3,007 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 197A (Tc) | 6V, 10V | 3.05mOhm @ 100A, 10V | 3.7V @ 150µA | 270 nC @ 10 V | ±20V | 10130 pF @ 25 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
|
IRFS7734PBFMOSFET N-CH 75V 183A D2PAK Infineon Technologies |
3,723 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 183A (Tc) | 6V, 10V | 3.5mOhm @ 100A, 10V | 3.7V @ 250µA | 270 nC @ 10 V | ±20V | 10150 pF @ 25 V | - | 290W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
|
|
IRFS7762PBFMOSFET N-CH 75V 85A D2PAK Infineon Technologies |
4,596 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 85A (Tc) | 6V, 10V | 6.7mOhm @ 51A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4440 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263AB (D2PAK) |
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