Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPT60R040S7XTMA1MOSFET N-CH 600V 13A 8HSOF Infineon Technologies |
1,965 |
|
Tabla de datos |
CoolMOS™S7 | 8-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 12V | 40mOhm @ 13A, 12V | 4.5V @ 790µA | 83 nC @ 12 V | ±20V | 3127 pF @ 300 V | - | 245W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HSOF-8-2 |
|
IPW65R110CFDAFKSA1MOSFET N-CH 650V 31.2A TO247-3 Infineon Technologies |
236 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 31.2A (Tc) | 10V | 110mOhm @ 12.7A, 10V | 4.5V @ 1.3mA | 118 nC @ 10 V | ±20V | 3240 pF @ 100 V | - | 277.8W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
|
IRFP4668PBFXKMA1TRENCH >=100V PG-TO247-3 Infineon Technologies |
396 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 130A (Tc) | 10V | 9.7mOhm @ 81A, 10V | 5V @ 250µA | 241 nC @ 10 V | ±30V | 10720 pF @ 50 V | - | 520W | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
IPL60R065C7AUMA1MOSFET HIGH POWER_NEW Infineon Technologies |
5,100 |
|
Tabla de datos |
CoolMOS™ C7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 29A (Tc) | 10V | 65mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2850 pF @ 400 V | - | 180W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4-1 |
|
IPDD60R045CFD7XTMA1MOSFET N-CH 600V 61A HDSOP-10 Infineon Technologies |
1,680 |
|
Tabla de datos |
CoolMOS™ CFD7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 61A (Tc) | - | 45mOhm @ 18A, 10V | 4.5V @ 900µA | 79 nC @ 10 V | ±20V | 3194 pF @ 400 V | - | 379W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
|
IPZ65R065C7XKSA1MOSFET N-CH 650V 33A TO247-4 Infineon Technologies |
145 |
|
Tabla de datos |
CoolMOS™ C7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 65mOhm @ 17.1A, 10V | 4V @ 850µA | 64 nC @ 10 V | ±20V | 3020 pF @ 400 V | - | 171W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
IPP65R041CFD7XKSA1650V FET COOLMOS TO247 Infineon Technologies |
489 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 50A (Tc) | 10V | 41mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
IMBG65R072M1HXTMA1SILICON CARBIDE MOSFET PG-TO263- Infineon Technologies |
817 |
|
Tabla de datos |
CoolSIC™ M1 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 33A (Tc) | 18V | 94mOhm @ 13.3A, 18V | 5.7V @ 4mA | 22 nC @ 18 V | +23V, -5V | 744 pF @ 400 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-12 |
|
IMW65R072M1HXKSA1MOSFET 650V NCH SIC TRENCH Infineon Technologies |
260 |
|
Tabla de datos |
CoolSIC™ M1 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 26A (Tc) | 18V | 94mOhm @ 13.3A, 18V | 5.7V @ 4mA | 22 nC @ 18 V | +23V, -5V | 744 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-41 |
|
IPP65R050CFD7AAKSA1MOSFET N-CH 650V 45A TO220-3 Infineon Technologies |
500 |
|
Tabla de datos |
CoolMOS™ CFD7A | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 45A (Tc) | 10V | 50mOhm @ 24.8A, 10V | 4.5V @ 1.24mA | 102 nC @ 10 V | ±20V | 4975 pF @ 400 V | - | 227W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO220-3 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
