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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD60R600P7SE8228AUMA1MOSFET N-CH 600V 6A TO252-3 Infineon Technologies |
2,276 |
|
Tabla de datos |
CoolMOS™ P7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 30W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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IPD60R2K0C6ATMA1MOSFET N-CH 600V 2.4A TO252-3 Infineon Technologies |
2,500 |
|
Tabla de datos |
CoolMOS™ C6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 2.4A (Tc) | 10V | 2Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7 nC @ 10 V | ±20V | 140 pF @ 100 V | - | 22.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPD30N10S3L34ATMA2MOSFET_(75V 120V( Infineon Technologies |
2,499 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 30A (Tc) | 4.5V, 10V | 31mOhm @ 30A, 10V | 2.4V @ 29µA | 31 nC @ 10 V | ±20V | 1976 pF @ 25 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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IAUZ40N06S5N105ATMA1MOSFET_)40V 60V) PG-TSDSON-8 Infineon Technologies |
5,003 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tj) | 7V, 10V | 10.5mOhm @ 20A, 10V | 3.4V @ 13µA | 16.3 nC @ 10 V | ±20V | 1099 pF @ 30 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TSDSON-8-32 |
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IPD047N03LF2SATMA1MOSFET N-CH 30V 71A TO-252 Infineon Technologies |
2,000 |
|
Tabla de datos |
StrongIRFET™ 2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 71A (Tc) | 4.5V, 10V | 4.7mOhm @ 40A, 10V | 2.35V @ 30µA | 32 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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IAUZ30N08S5N186ATMA1MOSFET_(75V 120V( PG-TSDSON-8 Infineon Technologies |
4,210 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 30A (Tj) | 6V, 10V | 18.6mOhm @ 15A, 10V | 3.8V @ 13µA | 12.1 nC @ 10 V | ±20V | 759 pF @ 40 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-32 |
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IPP050N03LF2SAKSA1MOSFET N-CH 30V 50A TO220-3 Infineon Technologies |
968 |
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Tabla de datos |
StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 53A (Tc) | 4.5V, 10V | 4.95mOhm @ 30A, 10V | 2.35V @ 30µA | 32 nC @ 10 V | ±20V | 1400 pF @ 15 V | - | 3.8W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-U05 |
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IRF7413ZTRPBFXTMA1TRENCH <= 40V Infineon Technologies |
3,938 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 10mOhm @ 13A, 10V | 2.25V @ 250µA | 14 nC @ 4.5 V | ±20V | 1210 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8-902 |
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IPP018N03LF2SAKSA1TRENCH <= 40V Infineon Technologies |
1,973 |
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Tabla de datos |
StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Ta), 128A (Tc) | 4.5V, 10V | 1.8mOhm @ 100A, 10V | 2.35V @ 110µA | 143 nC @ 10 V | ±20V | 6400 pF @ 15 V | - | 3.8W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-U05 |
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IPZ40N04S5L3R6ATMA1MOSFET_(20V 40V) PG-TSDSON-8 Infineon Technologies |
4,328 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 87A (Tj) | 4.5V, 10V | 3.6mOhm @ 20A, 10V | 2V @ 21µA | 32.8 nC @ 10 V | ±16V | 1966 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TSDSON-8-33 |
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