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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPDD60R050G7XTMA1MOSFET N-CH 600V 47A HDSOP-10 Infineon Technologies |
3,215 |
|
Tabla de datos |
CoolMOS™ G7 | 10-PowerSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 50mOhm @ 15.9A, 10V | 4V @ 800µA | 68 nC @ 10 V | ±20V | 2670 pF @ 400 V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-10-1 |
|
IMZA65R057M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies |
150 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 35A (Tc) | 18V | 74mOhm @ 16.7A, 18V | 5.7V @ 5mA | 28 nC @ 18 V | +20V, -2V | 930 pF @ 400 V | - | 133W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
|
AUIRFP4568-EMOSFET N-CH 150V 171A TO247AD Infineon Technologies |
355 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227 nC @ 10 V | ±30V | 10470 pF @ 50 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
|
IPW60R075CPFKSA1MOSFET N-CH 650V 39A TO247-3 Infineon Technologies |
237 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 39A (Tc) | 10V | 75mOhm @ 26A, 10V | 3.5V @ 1.7mA | 116 nC @ 10 V | ±20V | 4000 pF @ 100 V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
AUIRFP4568MOSFET N-CH 150V 171A TO247AC Infineon Technologies |
386 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227 nC @ 10 V | ±30V | 10470 pF @ 50 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
IPZA60R037P7XKSA1MOSFET N-CH 600V 76A TO247-4 Infineon Technologies |
194 |
|
Tabla de datos |
CoolMOS™ P7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 76A (Tc) | 10V | 37mOhm @ 29.5A, 10V | 4V @ 1.48mA | 121 nC @ 10 V | ±20V | 5243 pF @ 400 V | - | 255W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4 |
|
IPDQ60R022S7XTMA1HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies |
738 |
|
Tabla de datos |
CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 12V | 22mOhm @ 23A, 12V | 4.5V @ 1.44mA | 150 nC @ 12 V | ±20V | 5639 pF @ 300 V | - | 416W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22-1 |
|
|
IMZA65R030M1HXKSA1SILICON CARBIDE MOSFET, PG-TO247 Infineon Technologies |
144 |
|
Tabla de datos |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 53A (Tc) | 18V | 42mOhm @ 29.5A, 18V | 5.7V @ 8.8mA | 48 nC @ 18 V | +20V, -2V | 1643 pF @ 400 V | - | 197W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
|
|
IPZA65R018CFD7XKSA1HIGH POWER_NEW Infineon Technologies |
238 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 106A (Tc) | 10V | 18mOhm @ 58.2A, 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | ±20V | 11660 pF @ 400 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-4-3 |
|
|
AIMW120R060M1HXKSA11200V COOLSIC MOSFET PG-TO247-3 Infineon Technologies |
220 |
|
Tabla de datos |
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 18V | 78mOhm @ 13A, 18V | 5.7V @ 5.6mA | 31 nC @ 18 V | +23V, -7V | 1060 pF @ 800 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3-41 |
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