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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFB4410ZGPBFMOSFET N-CH 100V 97A TO220AB Infineon Technologies |
3,056 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 97A (Tc) | 10V | 9mOhm @ 58A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4820 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRFSL3004PBFMOSFET N-CH 40V 195A TO262 Infineon Technologies |
2,287 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Ta) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRFSL4020PBFMOSFET N-CH 200V 18A TO262 Infineon Technologies |
3,269 |
|
Tabla de datos |
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 105mOhm @ 11A, 10V | 4.9V @ 100µA | 29 nC @ 10 V | ±20V | 1200 pF @ 50 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRFSL4115PBFMOSFET N-CH 150V 195A TO262 Infineon Technologies |
4,482 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 195A (Tc) | 10V | 12.1mOhm @ 62A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±20V | 5270 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRLSL3034PBFMOSFET N-CH 40V 195A TO262 Infineon Technologies |
4,604 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 4.5V, 10V | 1.7mOhm @ 195A, 10V | 2.5V @ 250µA | 162 nC @ 4.5 V | ±20V | 10315 pF @ 25 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRF1404ZGPBFMOSFET N-CH 40V 180A TO220AB Infineon Technologies |
2,524 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 10V | 3.7mOhm @ 75A, 10V | 4V @ 250µA | 150 nC @ 10 V | ±20V | 4340 pF @ 25 V | - | 220W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF7665S2TR1PBFMOSFET N-CH 100V 4.1A DIRECTFET Infineon Technologies |
2,729 |
|
Tabla de datos |
- | DirectFET™ Isometric SB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.1A (Ta), 14.4A (Tc) | 10V | 62mOhm @ 8.9A, 10V | 5V @ 25µA | 13 nC @ 10 V | ±20V | 515 pF @ 25 V | - | 2.4W (Ta), 30W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DIRECTFET SB |
|
IRF8714GTRPBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
4,071 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1020 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRF8721GTRPBFMOSFET N-CH 30V 14A 8SO Infineon Technologies |
4,169 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1040 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
|
IRFB3004GPBFMOSFET N-CH 40V 195A TO220AB Infineon Technologies |
3,633 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 10V | 1.75mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 9200 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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