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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SPP15N65C3HKSA1MOSFET N-CH 650V 15A TO220-3 Infineon Technologies |
3,020 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
SPP15P10PGHKSA1MOSFET P-CH 100V 15A TO220-3 Infineon Technologies |
3,946 |
|
Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 10V | 240mOhm @ 10.6A, 10V | 2.1V @ 1.54mA | 48 nC @ 10 V | ±20V | 1280 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
SPP15P10PLGHKSA1MOSFET P-CH 100V 15A TO220-3 Infineon Technologies |
2,667 |
|
Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 200mOhm @ 11.3A, 10V | 2V @ 1.54mA | 62 nC @ 10 V | ±20V | 1490 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
SPP24N60CFDHKSA1MOSFET N-CH 650V 21.7A TO220-3 Infineon Technologies |
2,502 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 21.7A (Tc) | 10V | 185mOhm @ 15.4A, 10V | 5V @ 1.2mA | 143 nC @ 10 V | ±20V | 3160 pF @ 25 V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
SPS03N60C3BKMA1MOSFET N-CH 650V 3.2A TO251-3 Infineon Technologies |
2,508 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
|
SPU03N60C3BKMA1MOSFET N-CH 650V 3.2A TO251-3 Infineon Technologies |
3,036 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 3.9V @ 135µA | 17 nC @ 10 V | ±20V | 400 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
|
SPW07N60CFDFKSA1MOSFET N-CH 650V 6.6A TO247-3 Infineon Technologies |
2,653 |
|
Tabla de datos |
CoolMOS™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6.6A (Tc) | 10V | 700mOhm @ 4.6A, 10V | 5V @ 300µA | 47 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO247-3-1 |
|
IRF1324SPBFMOSFET N-CH 24V 195A D2PAK Infineon Technologies |
3,835 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 24 V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 7590 pF @ 24 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRF6218SPBFMOSFET P-CH 150V 27A D2PAK Infineon Technologies |
4,698 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±20V | 2210 pF @ 25 V | - | 250W (Tc) | - | - | - | Surface Mount | D2PAK |
|
IRF8734PBFMOSFET N-CH 30V 21A 8SO Infineon Technologies |
3,982 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta) | 4.5V, 10V | 3.5mOhm @ 21A, 10V | 2.35V @ 50µA | 30 nC @ 4.5 V | ±20V | 3175 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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