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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP60R380C6XKSA1MOSFET N-CH 600V 10.6A TO220-3 Infineon Technologies |
2,338 |
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Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP60R600C6XKSA1MOSFET N-CH 600V 7.3A TO220-3 Infineon Technologies |
2,788 |
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Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRFH5250DTRPBFMOSFET N-CH 25V 40A/100A 8PQFN Infineon Technologies |
3,121 |
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Tabla de datos |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 40A (Ta), 100A (Tc) | 4.5V, 10V | 1.4mOhm @ 50A, 10V | 2.35V @ 150µA | 83 nC @ 10 V | ±20V | 6115 pF @ 13 V | - | 3.6W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFH5255TRPBFMOSFET N-CH 25V 15A/51A 8PQFN Infineon Technologies |
2,665 |
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Tabla de datos |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 15A (Ta), 51A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.35V @ 25µA | 14.5 nC @ 10 V | ±20V | 988 pF @ 13 V | - | 3.6W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IRLR8256PBFMOSFET N-CH 25V 81A DPAK Infineon Technologies |
4,963 |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 25 V | 81A (Tc) | 4.5V, 10V | 5.7mOhm @ 25A, 10V | 2.35V @ 25µA | 15 nC @ 4.5 V | ±20V | 1470 pF @ 13 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRLR8259PBFMOSFET N-CH 25V 57A DPAK Infineon Technologies |
2,817 |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 25 V | 57A (Tc) | 4.5V, 10V | 8.7mOhm @ 21A, 10V | 2.35V @ 25µA | 10 nC @ 4.5 V | ±20V | 900 pF @ 13 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRLR8256TRPBFMOSFET N-CH 25V 81A DPAK Infineon Technologies |
3,196 |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 81A (Tc) | 4.5V, 10V | 5.7mOhm @ 25A, 10V | 2.35V @ 25µA | 15 nC @ 4.5 V | ±20V | 1470 pF @ 13 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSB012N03LX3 GMOSFET N-CH 30V 39A/180A 2WDSON Infineon Technologies |
3,618 |
|
Tabla de datos |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | 2.2V @ 250µA | 169 nC @ 10 V | ±20V | 16900 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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BSB017N03LX3 GMOSFET N-CH 30V 32A/147A 2WDSON Infineon Technologies |
3,455 |
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Tabla de datos |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 147A (Tc) | 4.5V, 10V | 1.7mOhm @ 30A, 10V | 2.2V @ 250µA | 102 nC @ 10 V | ±20V | 7800 pF @ 15 V | - | 2.8W (Ta), 57W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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BSF024N03LT3GXUMA1MOSFET N-CH 30V 15A/106A 2WDSON Infineon Technologies |
4,422 |
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Tabla de datos |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 106A (Tc) | 4.5V, 10V | 2.4mOhm @ 20A, 10V | 2.2V @ 250µA | 71 nC @ 10 V | ±20V | 5500 pF @ 15 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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