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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SN7002W L6433MOSFET N-CH 60V 230MA SOT323-3 Infineon Technologies |
4,775 |
|
Tabla de datos |
SIPMOS® | SC-70, SOT-323 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 230mA (Ta) | 4.5V, 10V | 5Ohm @ 230mA, 10V | 1.8V @ 26µA | 1.5 nC @ 10 V | ±20V | 45 pF @ 25 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT323 |
|
SPA07N60CFDXKSA1MOSFET N-CH 650V 6.6A TO220-FP Infineon Technologies |
4,743 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6.6A (Tc) | 10V | 700mOhm @ 4.6A, 10V | 5V @ 300µA | 47 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
|
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SPA15N65C3XKSA1MOSFET N-CH 650V 15A TO220-3 Infineon Technologies |
4,388 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
|
SPD30N03S2L10GBTMA1MOSFET N-CH 30V 30A TO252-3 Infineon Technologies |
2,711 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2V @ 50µA | 41.8 nC @ 10 V | ±20V | 1550 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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SPD50N03S2L06GBTMA1MOSFET N-CH 30V 50A TO252-3 Infineon Technologies |
4,395 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6.4mOhm @ 50A, 10V | 2V @ 85µA | 68 nC @ 10 V | ±20V | 2530 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
SPI11N60CFDHKSA1MOSFET N-CH 650V 11A TO262-3 Infineon Technologies |
2,840 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 440mOhm @ 7A, 10V | 5V @ 500µA | 64 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
|
SPI15N60CFDHKSA1MOSFET N-CH 650V 13.4A TO262-3 Infineon Technologies |
2,015 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.4A (Tc) | 10V | 330mOhm @ 9.4A, 10V | 5V @ 750µA | 84 nC @ 10 V | ±20V | 1820 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
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SPI20N60CFDHKSA1MOSFET N-CH 650V 20.7A TO262-3 Infineon Technologies |
2,558 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 20.7A (Tc) | 10V | 220mOhm @ 13.1A, 10V | 5V @ 1mA | 124 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
SPP07N60CFDHKSA1MOSFET N-CH 650V 6.6A TO220-3 Infineon Technologies |
4,746 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6.6A (Tc) | 10V | 700mOhm @ 4.6A, 10V | 5V @ 300µA | 47 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
|
SPP08P06PHXKSA1MOSFET P-CH 60V 8.8A TO220-3 Infineon Technologies |
2,051 |
|
Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.8A (Tc) | 10V | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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