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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7799L2TR1PBFMOSFET N-CH 250V 375A DIRECTFET Infineon Technologies |
4,204 |
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Tabla de datos |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 375A (Tc) | 10V | 38mOhm @ 21A, 10V | 5V @ 250µA | 165 nC @ 10 V | ±30V | 6714 pF @ 25 V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
|
IRFH5306TRPBFMOSFET N-CH 30V 15A/44A PQFN Infineon Technologies |
2,210 |
|
Tabla de datos |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 44A (Tc) | 4.5V, 10V | 8.1mOhm @ 15A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1125 pF @ 15 V | - | 3.6W (Ta), 26W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) Single Die |
|
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IRF7759L2TRPBFMOSFET N-CH 75V 26A DIRECTFET Infineon Technologies |
4,360 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 26A (Ta), 375A (Tc) | 10V | 2.3mOhm @ 96A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 12222 pF @ 25 V | - | 3.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
|
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IRF7799L2TRPBFMOSFET N-CH 250V 375A DIRECTFET Infineon Technologies |
4,167 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 35A (Tc) | 10V | 38mOhm @ 21A, 10V | 5V @ 250µA | 165 nC @ 10 V | ±30V | 6714 pF @ 25 V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
|
IRF7815PBFMOSFET N-CH 150V 5.1A 8SO Infineon Technologies |
2,756 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 150 V | 5.1A (Ta) | 10V | 43mOhm @ 3.1A, 10V | 5V @ 100µA | 38 nC @ 10 V | ±20V | 1647 pF @ 75 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
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IRF9310PBFMOSFET P-CH 30V 20A 8SO Infineon Technologies |
2,280 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Discontinued at Digi-Key | P-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 2.4V @ 100µA | 165 nC @ 10 V | ±20V | 5250 pF @ 15 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IPD60R380C6MOSFET N-CH 600V 10.6A TO252-3 Infineon Technologies |
4,229 |
|
Tabla de datos |
CoolMOS™ C6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 320µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD60R600C6BTMA1MOSFET N-CH 600V 7.3A TO252-3 Infineon Technologies |
4,216 |
|
Tabla de datos |
CoolMOS™ C6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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IPD60R950C6MOSFET N-CH 600V 4.4A TO252-3 Infineon Technologies |
3,390 |
|
Tabla de datos |
CoolMOS™ C6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPP530N15N3GXKSA1MOSFET N-CH 150V 21A TO220-3 Infineon Technologies |
2,301 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 8V, 10V | 53mOhm @ 18A, 10V | 4V @ 35µA | 12 nC @ 10 V | ±20V | 887 pF @ 75 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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