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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPB08P06PGATMA1MOSFET P-CH 60V 8.8A D2PAK Infineon Technologies |
2,747 |
|
Tabla de datos |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 8.8A (Ta) | 10V | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 13 nC @ 10 V | ±20V | 420 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
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SPB80N06S08ATMA1MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
2,354 |
|
Tabla de datos |
SIPMOS® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 7.7mOhm @ 80A, 10V | 4V @ 240µA | 187 nC @ 10 V | ±20V | 3660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
SPD02N80C3BTMA1MOSFET N-CH 800V 2A TO252-3 Infineon Technologies |
4,529 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 2A (Tc) | 10V | 2.7Ohm @ 1.2A, 10V | 3.9V @ 120µA | 16 nC @ 10 V | ±20V | 290 pF @ 100 V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
SPD04N80C3BTMA1MOSFET N-CH 800V 4A TO252-3 Infineon Technologies |
4,580 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 3.9V @ 240µA | 26 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
SPI07N65C3HKSA1MOSFET N-CH 650V 7.3A TO262-3 Infineon Technologies |
4,315 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 27 nC @ 10 V | ±20V | 790 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
|
SPI08N50C3XKSA1MOSFET N-CH 560V 7.6A TO262-3 Infineon Technologies |
2,833 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
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SPI08N80C3XKSA1MOSFET N-CH 800V 8A TO262-3 Infineon Technologies |
2,223 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 650mOhm @ 5.1A, 10V | 3.9V @ 470µA | 60 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
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SPI11N65C3XKSA1MOSFET N-CH 650V 11A TO262-3 Infineon Technologies |
3,618 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
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SPI15N60C3HKSA1MOSFET N-CH 650V 15A TO262-3 Infineon Technologies |
3,420 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 280mOhm @ 9.4A, 10V | 3.9V @ 675µA | 63 nC @ 10 V | ±20V | 1660 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
|
SPI16N50C3HKSA1MOSFET N-CH 560V 16A TO262-3 Infineon Technologies |
4,247 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 16A (Tc) | 10V | 280mOhm @ 10A, 10V | 3.9V @ 675µA | 66 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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