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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFS3207ZPBFMOSFET N-CH 75V 120A D2PAK Infineon Technologies |
4,592 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 4.1mOhm @ 75A, 10V | 4V @ 150µA | 170 nC @ 10 V | ±20V | 6920 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
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IRFS3306PBFMOSFET N-CH 60V 120A D2PAK Infineon Technologies |
4,012 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120 nC @ 10 V | ±20V | 4520 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRFS3307ZPBFMOSFET N-CH 75V 120A D2PAK Infineon Technologies |
4,285 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 120A (Tc) | 10V | 5.8mOhm @ 75A, 10V | 4V @ 150µA | 110 nC @ 10 V | ±20V | 4750 pF @ 50 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF6622TRPBFMOSFET N-CH 25V 15A DIRECTFET Infineon Technologies |
3,664 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric SQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 15A (Ta), 59A (Tc) | 4.5V, 10V | 6.3mOhm @ 15A, 10V | 2.35V @ 25µA | 17 nC @ 4.5 V | ±20V | 1450 pF @ 13 V | - | 2.2W (Ta), 34W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SQ |
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IRF6641TRPBFMOSFET N-CH 200V 4.6A DIRECTFET Infineon Technologies |
2,585 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MZ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.6A (Ta), 26A (Tc) | 10V | 59.9mOhm @ 5.5A, 10V | 4.9V @ 150µA | 48 nC @ 10 V | ±20V | 2290 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MZ |
|
|
IRFS38N20DPBFMOSFET N-CH 200V 43A D2PAK Infineon Technologies |
3,996 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 200 V | 43A (Tc) | 10V | 54mOhm @ 26A, 10V | 5V @ 250µA | 91 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFR2607ZPBFMOSFET N-CH 75V 42A DPAK Infineon Technologies |
2,476 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 22mOhm @ 30A, 10V | 4V @ 50µA | 51 nC @ 10 V | ±20V | 1440 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-901|DPAK |
|
IRF2804S-7PPBFMOSFET N-CH 40V 160A D2PAK Infineon Technologies |
2,302 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 40 V | 160A (Tc) | 10V | 1.6mOhm @ 160A, 10V | 4V @ 250µA | 260 nC @ 10 V | ±20V | 6930 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
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IPD105N03LGATMA1MOSFET N-CH 30V 35A TO252-3 Infineon Technologies |
3,354 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 35A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 14 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IPP50R350CPXKSA1MOSFET N-CH 550V 10A TO220-3 Infineon Technologies |
3,466 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25 nC @ 10 V | ±20V | 1020 pF @ 100 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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