制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPP050N06N GMOSFET N-CH 60V 100A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 5mOhm @ 100A, 10V | 4V @ 270µA | 167 nC @ 10 V | ±20V | 6100 pF @ 30 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP05N03LB GMOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 5.3mOhm @ 60A, 10V | 2V @ 40µA | 25 nC @ 5 V | ±20V | 3209 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP065N06LGAKSA1MOSFET N-CH 60V 80A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 6.5mOhm @ 80A, 10V | 2V @ 180µA | 157 nC @ 10 V | ±20V | 5100 pF @ 30 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP07N03LB GMOSFET N-CH 30V 50A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 6.6mOhm @ 50A, 10V | 2V @ 40µA | 25 nC @ 5 V | ±20V | 2782 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP091N06N GMOSFET N-CHAN TO-220 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | - | 9.1mOhm @ 80A, 10V | 4V @ 130µA | 81 nC @ 10 V | - | 2800 pF @ 30 V | - | - | - | - | - | Through Hole | PG-TO220-3 |
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IPP100N06S3-03MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 3.3mOhm @ 80A, 10V | 4V @ 230µA | 480 nC @ 10 V | ±20V | 21620 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP100N06S3-04MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 4.4mOhm @ 80A, 10V | 4V @ 150µA | 314 nC @ 10 V | ±20V | 14230 pF @ 25 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP100N06S3L-03MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 5V, 10V | 3mOhm @ 80A, 10V | 2.2V @ 230µA | 550 nC @ 10 V | ±16V | 26240 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP100N06S3L-04MOSFET N-CH 55V 100A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 5V, 10V | 3.8mOhm @ 80A, 10V | 2.2V @ 150µA | 362 nC @ 10 V | ±16V | 17270 pF @ 25 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP10N03LB GMOSFET N-CH 30V 50A TO220-3 Infineon Technologies |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 9.9mOhm @ 50A, 10V | 2V @ 20µA | 13 nC @ 5 V | ±20V | 1639 pF @ 15 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |