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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPP45N06S3L-13MOSFET N-CH 55V 45A TO220-3 Infineon Technologies |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 45A (Tc) | 5V, 10V | 13.4mOhm @ 26A, 10V | 2.2V @ 30µA | 75 nC @ 10 V | ±16V | 3600 pF @ 25 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP50CN10NGXKSA1MOSFET N-CH 100V 20A TO220-3 Infineon Technologies |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 10V | 50mOhm @ 20A, 10V | 4V @ 20µA | 16 nC @ 10 V | ±20V | 1090 pF @ 50 V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP77N06S3-09MOSFET N-CH 55V 77A TO220-3 Infineon Technologies |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 77A (Tc) | 10V | 9.1mOhm @ 39A, 10V | 4V @ 55µA | 103 nC @ 10 V | ±20V | 5335 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80CN10NGHKSA1MOSFET N-CH 100V 13A TO220-3 Infineon Technologies |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 80mOhm @ 13A, 10V | 4V @ 12µA | 11 nC @ 10 V | ±20V | 716 pF @ 50 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPP80N06S3-05MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 5.4mOhm @ 63A, 10V | 4V @ 110µA | 240 nC @ 10 V | ±20V | 10760 pF @ 25 V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80N06S3-07MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.8mOhm @ 51A, 10V | 4V @ 80µA | 170 nC @ 10 V | ±20V | 7768 pF @ 25 V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80N06S3L-05MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 5V, 10V | 4.8mOhm @ 69A, 10V | 2.2V @ 115µA | 273 nC @ 10 V | ±16V | 13060 pF @ 25 V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80N06S3L-06MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 5V, 10V | 5.9mOhm @ 56A, 10V | 2.2V @ 80µA | 196 nC @ 10 V | ±16V | 9417 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP80N06S3L-08MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 5V, 10V | 7.9mOhm @ 43A, 10V | 2.2V @ 55µA | 134 nC @ 10 V | ±16V | 6475 pF @ 25 V | - | 105W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPS04N03LA GMOSFET N-CH 25V 50A TO251-3 Infineon Technologies |
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Tabla de datos |
OptiMOS™ | TO-251-3 Stub Leads, IPAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 4mOhm @ 50A, 10V | 2V @ 80µA | 41 nC @ 5 V | ±20V | 5199 pF @ 15 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO251-3-11 |
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