制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRFSL3006PBFMOSFET N-CH 60V 195A TO262 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8970 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
![]() |
IPP120N04S302AKSA1MOSFET N-CH 40V 120A TO220-3 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 2.3mOhm @ 80A, 10V | 4V @ 230µA | 210 nC @ 10 V | ±20V | 14300 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
![]() |
IRF150P221XKMA1MOSFET N-CH 150V 186A TO247-3 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
StrongIRFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 186A (Tc) | 10V | 4.5mOhm @ 100A, 10V | 4.6V @ 264µA | 100 nC @ 10 V | ±20V | 6000 pF @ 75 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-3 |
![]() |
AUIRFS3107-7TRLMOSFET N-CH 75V 240A D2PAK-7 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 75 V | 240A (Tc) | - | 2.6mOhm @ 160A, 10V | 4V @ 250µA | 240 nC @ 10 V | - | 9200 pF @ 50 V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
![]() |
IPB065N15N3GE8187ATMA1MOSFET N-CH 150V 130A TO263-7 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 130A (Tc) | 8V, 10V | 6.5mOhm @ 100A, 10V | 4V @ 270µA | 93 nC @ 10 V | ±20V | 7300 pF @ 75 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7 |
![]() |
IPDQ60R055CFD7XTMA1HIGH POWER_NEW PG-HDSOP-22 Infineon Technologies |
0 | - |
|
- |
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 600 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-HDSOP-22-1 |
![]() |
BSC020N025S GMOSFET N-CH 25V 30A/100A TDSON Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 30A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 50A, 10V | 2V @ 110µA | 66 nC @ 5 V | ±20V | 8290 pF @ 15 V | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
![]() |
IRFS4321TRL7PPMOSFET N-CH 150V 86A D2PAK-7 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 86A (Tc) | 10V | 14.7mOhm @ 34A, 10V | 5V @ 250µA | 110 nC @ 10 V | ±30V | 4460 pF @ 50 V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7 |
![]() |
IRFBA1404MOSFET N-CH 40V 206A SUPER-220 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 206A (Ta) | 10V | 3.7mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 300W (Tc) | - | - | - | Through Hole | SUPER-220™ (TO-273AA) |
![]() |
IRFBL3703MOSFET N-CH 30V 260A SUPER D2PAK Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | Super D2-Pak | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 260A (Tc) | 7V, 10V | 2.5mOhm @ 76A, 10V | 4V @ 250µA | 209 nC @ 10 V | ±20V | 8250 pF @ 25 V | - | 3.8W (Ta), 300W (Tc) | - | - | - | Surface Mount | SUPER D2-PAK |