Hola!! Ahora
+8619886240609(Alice)
+8619886240609(Alice)
Mi cuenta
FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BTS110E3045ANTMA1MOSFET N-CH 100V 10A TO220AB Infineon Technologies |
0 |
|
Tabla de datos |
TEMPFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | - | 200mOhm @ 5A, 10V | 3.5V @ 1mA | - | - | 600 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-220AB |
|
|
94-2113MOSFET N-CH 30V 116A D2PAK Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60 nC @ 4.5 V | ±16V | 3290 pF @ 25 V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRL2203NLMOSFET N-CH 30V 116A TO262 Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 116A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 3V @ 250µA | 60 nC @ 4.5 V | ±16V | 3290 pF @ 25 V | - | 3.8W (Ta), 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IRL3705NLMOSFET N-CH 55V 89A TO262 Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 89A (Tc) | 4V, 10V | 10mOhm @ 46A, 10V | 2V @ 250µA | 98 nC @ 5 V | ±16V | 3600 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRF6643TR1PBFMOSFET N-CH 150V 6.2A DIRECTFET Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MZ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 6.2A (Ta), 35A (Tc) | 10V | 34.5mOhm @ 7.6A, 10V | 4.9V @ 150µA | 55 nC @ 10 V | ±20V | 2340 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MZ |
|
GS-065-004-1-L-MRGS-065-004-1-L-MR Infineon Technologies Canada Inc. |
0 |
|
- |
- | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 4A (Tc) | 6V | 570mOhm @ 1.2A, 6V | 2.6V @ 1mA | 0.7 nC @ 6 V | +7V, -10V | 30 pF @ 400 V | - | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PDFN (5x6) |
|
AUIRFS4010-7TRLMOSFET N-CH 100V 190A D2PAK-7P Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | - | 4mOhm @ 110A, 10V | 4V @ 250µA | 230 nC @ 10 V | - | 9830 pF @ 50 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
IRLBA3803PMOSFET N-CH 30V 179A SUPER-220 Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 179A (Tc) | - | 5mOhm @ 71A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | - | 5000 pF @ 25 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
|
|
IRFS4228PBFMOSFET N-CH 150V 83A D2PAK Infineon Technologies |
4 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 107 nC @ 10 V | ±30V | 4530 pF @ 25 V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRFL4105TRMOSFET N-CH 55V 3.7A SOT223 Infineon Technologies |
0 |
|
Tabla de datos |
HEXFET® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 3.7A (Ta) | 10V | 45mOhm @ 3.7A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 660 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
- Envío rápido La puerta rápida y convenienteEntrega a domicilio.
- Seguridad de pago Más de 5 diferentes métodos de pago seguro.
- Estricto Control de calidad 365 días de servicio post-venta y garantía
- Simple y profesional Soluciones de adquisición electrónica integral.
