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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRFS4127TRLMOSFET N-CH 200V 72A D2PAK Infineon Technologies |
3,309 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 200 V | 72A (Tc) | 10V | 22mOhm @ 44A, 10V | 5V @ 250µA | 150 nC @ 10 V | ±20V | 5380 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
|
IPC302N12N3X1SA1MOSFET N-CH 120V 1A SAWN ON FOIL Infineon Technologies |
4,643 |
|
Tabla de datos |
OptiMOS™ | Die | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 275µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
|
IRFIZ48NMOSFET N-CH 55V 36A TO220AB FP Infineon Technologies |
2,871 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 36A (Tc) | 10V | 16mOhm @ 22A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IRF6648TR1PBFMOSFET N-CH 60V 86A DIRECTFET MN Infineon Technologies |
4,430 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 86A (Tc) | 10V | 7mOhm @ 17A, 10V | 4.9V @ 150µA | 50 nC @ 10 V | ±20V | 2120 pF @ 25 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MN |
|
IRF100P219XKMA1MOSFET N-CH 100V TO247AC Infineon Technologies |
3,399 |
|
Tabla de datos |
StrongIRFET™ | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 203A (Tc) | 6V, 10V | 1.7mOhm @ 100A, 10V | 3.8V @ 278µA | 270 nC @ 10 V | ±20V | 12020 pF @ 50 V | - | 341W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
AUIRFS3006-7TRLMOSFET N-CH 60V 293A D2PAK-7P Infineon Technologies |
2,066 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | - | 2.1mOhm @ 168A, 10V | 4V @ 250µA | 300 nC @ 10 V | - | 8850 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
IPP04CN10NGXKSA1MV POWER MOS Infineon Technologies |
3,917 |
|
Tabla de datos |
OptiMOS™ 2 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 4.2mOhm @ 100A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 13800 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
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IRF6613TR1PBFMOSFET N-CH 40V 23A DIRECTFET Infineon Technologies |
4,303 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 150A (Tc) | 4.5V, 10V | 3.4mOhm @ 23A, 10V | 2.25V @ 250µA | 63 nC @ 4.5 V | ±20V | 5950 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
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IRFP140NMOSFET N-CH 100V 33A TO247AC Infineon Technologies |
3,467 |
|
Tabla de datos |
HEXFET® | TO-247-3 | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 33A (Tc) | 10V | 52mOhm @ 16A, 10V | 4V @ 250µA | 94 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
|
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IRF200S234MOSFET N-CH 200V 90A D2PAK Infineon Technologies |
4,616 |
|
Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 90A (Tc) | 10V | 16.9mOhm @ 51A, 10V | 5V @ 250µA | 162 nC @ 10 V | ±20V | 6484 pF @ 50 V | - | 417W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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