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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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BSC105N10LSFGATMA1MOSFET N-CH 100V 11.4/90A 8TDSON Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 11.4A (Ta), 90A (Tc) | 4.5V, 10V | 10.5mOhm @ 50A, 10V | 2.4V @ 110µA | 53 nC @ 10 V | ±20V | 3900 pF @ 50 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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AUIRF3205ZMOSFET N-CH 55V 75A TO220AB Infineon Technologies |
6 |
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Tabla de datos |
HEXFET® | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPB100N06S2L05ATMA2MOSFET N-CH 55V 100A TO263-3 Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 80A, 10V | 2V @ 250µA | 230 nC @ 10 V | ±20V | 5660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB011N04NF2SATMA1TRENCH <= 40V Infineon Technologies |
0 |
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Tabla de datos |
StrongIRFET™2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 43A (Ta), 201A (Tc) | 6V, 10V | 1.15mOhm @ 100A, 10V | 3.4V @ 249µA | 315 nC @ 10 V | ±20V | 15000 pF @ 20 V | - | 3.8W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRFP048NMOSFET N-CH 55V 64A TO247AC Infineon Technologies |
0 |
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Tabla de datos |
HEXFET® | TO-247-3 | Bag | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 16mOhm @ 37A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AC |
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IRLBA1304MOSFET N-CH 40V 185A SUPER-220 Infineon Technologies |
0 |
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Tabla de datos |
HEXFET® | TO-273AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 185A (Tc) | 4.5V, 10V | 4mOhm @ 110A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 7660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | SUPER-220™ (TO-273AA) |
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AUIRF7739L2TRMOSFET N-CH 40V 46A DIRECTFET Infineon Technologies |
0 |
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Tabla de datos |
HEXFET® | DirectFET™ Isometric L8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 46A (Ta), 270A (Tc) | 10V | 1mOhm @ 160A, 10V | 4V @ 250µA | 330 nC @ 10 V | ±20V | 11880 pF @ 25 V | - | 3.8W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric L8 |
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IPB60R299CPAATMA1MOSFET N-CH 600V 11A TO263-3 Infineon Technologies |
0 |
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Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 11A (Tc) | 10V | 299mOhm @ 6.6A, 10V | 3.5V @ 440µA | 29 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
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IRFH7185TRPBFMOSFET N CH 100V 19A 8QFN Infineon Technologies |
0 |
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Tabla de datos |
FASTIRFET™, HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Ta) | 10V | 5.2mOhm @ 50A, 10V | 3.6V @ 150µA | 54 nC @ 10 V | ±20V | 2320 pF @ 50 V | - | 3.6W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IPC302N25N3X1SA1MOSFET N-CH 250V 1A SAWN ON FOIL Infineon Technologies |
0 |
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Tabla de datos |
OptiMOS™ | Die | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 250 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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