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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF3805SMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
2,928 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290 nC @ 10 V | ±20V | 7960 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF9540NLPBFMOSFET P-CH 100V 23A TO262 Infineon Technologies |
3,419 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 23A (Tc) | 10V | 117mOhm @ 14A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 3.1W (Ta), 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-262 |
|
IRLMS1902TRMOSFET N-CH 20V 3.2A MICRO6 Infineon Technologies |
3,518 |
|
Tabla de datos |
HEXFET® | SOT-23-6 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 3.2A (Ta) | 2.7V, 4.5V | 100mOhm @ 2.2A, 4.5V | 700mV @ 250µA (Min) | 7 nC @ 4.5 V | ±12V | 300 pF @ 15 V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro6™(TSOP-6) |
|
|
IRFZ48NLMOSFET N-CH 55V 64A TO262 Infineon Technologies |
4,099 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81 nC @ 10 V | ±20V | 1970 pF @ 25 V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
IRLI2910MOSFET N-CH 100V 31A TO220AB FP Infineon Technologies |
3,336 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 31A (Tc) | 4V, 10V | 26mOhm @ 16A, 10V | 2V @ 250µA | 140 nC @ 5 V | ±16V | 3700 pF @ 25 V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
|
IRF7832TRMOSFET N-CH 30V 20A 8-SOIC Infineon Technologies |
2,386 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Ta) | - | 4mOhm @ 20A, 10V | 2.32V @ 250µA | 51 nC @ 4.5 V | - | 4310 pF @ 15 V | - | - | - | - | - | Surface Mount | 8-SO |
|
IPD90P04P4L04ATMA1MOSFET P-CH 40V 90A TO252-3 Infineon Technologies |
4,417 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 4.3mOhm @ 90A, 10V | 2.2V @ 250µA | 176 nC @ 10 V | ±16V | 11570 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
BSB008NE2LXXUMA1MOSFET N-CH 25V 46A/180A 2WDSON Infineon Technologies |
2,209 |
|
Tabla de datos |
OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 46A (Ta), 180A (Tc) | 4.5V, 10V | 0.8mOhm @ 30A, 10V | 2V @ 250µA | 343 nC @ 10 V | ±20V | 16000 pF @ 12 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
|
IPB009N03LGATMA1MOSFET N-CH 30V 180A TO263-7 Infineon Technologies |
3,156 |
|
Tabla de datos |
OptiMOS™ | TO-263-7, D2PAK (6 Leads + Tab) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 180A (Tc) | 4.5V, 10V | 0.95mOhm @ 100A, 10V | 2.2V @ 250µA | 227 nC @ 10 V | ±20V | 25000 pF @ 15 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-7-3 |
|
BTS110NKSA1MOSFET N-CH 100V 10A TO220AB Infineon Technologies |
2,192 |
|
Tabla de datos |
TEMPFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | - | 200mOhm @ 5A, 10V | 3.5V @ 1mA | - | - | 600 pF @ 25 V | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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