制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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AUIRFS3006-7PMOSFET N-CH 60V 240A D2PAK Infineon Technologies |
4,340 | - |
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HEXFET® | TO-263-7, D2PAK (6 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 240A (Tc) | 10V | 2.1mOhm @ 168A, 10V | 4V @ 250µA | 300 nC @ 10 V | ±20V | 8850 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRLI2203NMOSFET N-CH 30V 61A TO220AB FP Infineon Technologies |
4,691 | - |
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HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 61A (Tc) | 4.5V, 10V | 7mOhm @ 37A, 10V | 1V @ 250µA | 110 nC @ 4.5 V | ±16V | 3500 pF @ 25 V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRF1310NLMOSFET N-CH 100V 42A TO262 Infineon Technologies |
4,951 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 42A (Tc) | 10V | 36mOhm @ 22A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 3.8W (Ta), 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF3710LMOSFET N-CH 100V 57A TO262 Infineon Technologies |
2,683 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 57A (Tc) | 10V | 23mOhm @ 28A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3130 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IPB80N04S303ATMA1MOSFET N-CH 40V 80A TO263-3 Infineon Technologies |
4,802 | - |
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OptiMOS™ T | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.2mOhm @ 80A, 10V | 4V @ 120µA | 110 nC @ 10 V | ±20V | 7300 pF @ 25 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPP029N06NAKSA1MOSFET N-CH 60V 24A/100A TO220-3 Infineon Technologies |
2,934 | - |
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OptiMOS™ | TO-220-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Ta), 100A (Tc) | 6V, 10V | 2.9mOhm @ 100A, 10V | 2.8V @ 75µA | 56 nC @ 10 V | ±20V | 4100 pF @ 30 V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRF3805MOSFET N-CH 55V 75A TO220AB Infineon Technologies |
4,476 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 3.3mOhm @ 75A, 10V | 4V @ 250µA | 290 nC @ 10 V | ±20V | 7960 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF2804MOSFET N-CH 40V 75A TO220AB Infineon Technologies |
2,774 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 10V | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240 nC @ 10 V | ±20V | 6450 pF @ 25 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRFSL4010MOSFET N CH 100V 180A TO262 Infineon Technologies |
2,139 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | - | 4.7mOhm @ 106A, 10V | 4V @ 250µA | 215 nC @ 10 V | - | 9575 pF @ 50 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IPP50R199CPXKSA1MOSFET N-CH 550V 17A TO220-3 Infineon Technologies |
2,596 | - |
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CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45 nC @ 10 V | ±20V | 1800 pF @ 100 V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |