制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRF6729MTRPBFMOSFET N-CH 30V 31A DIRECTFET Infineon Technologies |
2,362 | - |
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HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 31A (Ta), 190A (Tc) | 4.5V, 10V | 1.8mOhm @ 31A, 10V | 2.35V @ 150µA | 63 nC @ 4.5 V | ±20V | 6030 pF @ 15 V | - | 2.8W (Ta), 104W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
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IRFB4410MOSFET N-CH 100V 96A TO220AB Infineon Technologies |
2,026 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 96A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180 nC @ 10 V | ±20V | 5150 pF @ 50 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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94-4796MOSFET N-CH 55V 85A D2PAK Infineon Technologies |
2,244 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPC313N10N3RX1SA2TRENCH >=100V Infineon Technologies |
4,827 | - |
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OptiMOS™ 3 | Die | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | - | 10V | 100mOhm @ 2A, 10V | 3.5V @ 275µA | - | - | - | - | - | - | - | - | Surface Mount | Die |
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IRFI1310NMOSFET N-CH 100V 24A TO220AB FP Infineon Technologies |
3,067 | - |
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HEXFET® | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 24A (Tc) | 10V | 36mOhm @ 13A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 1900 pF @ 25 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPL65R065CFD7AUMA1HIGH POWER_NEW Infineon Technologies |
4,010 | - |
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CoolMOS™ CFD7 | 4-PowerTSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 33A (Tc) | 10V | 65mOhm @ 16.4A, 10V | 4.5V @ 860µA | 68 nC @ 10 V | ±20V | 3288 pF @ 400 V | - | 195W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4-1 |
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IPB048N06LGATMA1MOSFET N-CH 60V 100A D2PAK Infineon Technologies |
3,743 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 4.5V, 10V | 4.4mOhm @ 100A, 10V | 2V @ 270µA | 225 nC @ 10 V | ±20V | 7600 pF @ 30 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IPB050N06NGATMA1MOSFET N-CH 60V 100A D2PAK Infineon Technologies |
4,460 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 100A (Tc) | 10V | 4.7mOhm @ 100A, 10V | 4V @ 270µA | 167 nC @ 10 V | ±20V | 6100 pF @ 30 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRFH5015TR2PBFMOSFET N-CH 150V 10A 8VQFN Infineon Technologies |
3,069 | - |
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- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 10A (Ta), 56A (Tc) | - | 31mOhm @ 34A, 10V | 5V @ 150µA | 50 nC @ 10 V | - | 2300 pF @ 50 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFH5020TR2PBFMOSFET N-CH 200V 5.1A 8PQFN Infineon Technologies |
2,966 | - |
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- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.1A (Ta) | - | 55mOhm @ 7.5A, 10V | 5V @ 150µA | 54 nC @ 10 V | - | 2290 pF @ 100 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |