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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF1010ELMOSFET N-CH 60V 84A TO262 Infineon Technologies |
4,215 |
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Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 10V | 12mOhm @ 50A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IPC302NE7N3X1SA1MOSFET N-CH 75V 1A SAWN ON FOIL Infineon Technologies |
4,848 |
|
Tabla de datos |
OptiMOS™ | Die | Bulk | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 75 V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.8V @ 270µA | - | - | - | - | - | - | - | - | Surface Mount | Sawn on foil |
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AUIRFB8405MOSFET N-CH 40V 120A TO220AB Infineon Technologies |
4,408 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 120A (Tc) | 10V | 2.5mOhm @ 100A, 10V | 3.9V @ 100µA | 161 nC @ 10 V | ±20V | 5193 pF @ 25 V | - | 163W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRF6727MTR1PBFMOSFET N-CH 30V 32A DIRECTFET Infineon Technologies |
2,076 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.7mOhm @ 32A, 10V | 2.35V @ 100µA | 74 nC @ 4.5 V | ±20V | 6190 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
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ISZ113N10NM5LFATMA1OPTIMOSTM5LINEARFET100V Infineon Technologies |
2,380 |
|
- |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Ta), 63A (Tc) | 10V | 11.3mOhm @ 20A, 10V | 3.9V @ 36µA | 29 nC @ 10 V | ±20V | 2300 pF @ 50 V | - | 2.5W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 FL |
|
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IPB100N10S305ATMA2MOSFET_(75V 120V( Infineon Technologies |
3,708 |
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Tabla de datos |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 176 nC @ 10 V | ±20V | 11570 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
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SPB16N50C3ATMA1MOSFET N-CH 560V 16A TO263-3 Infineon Technologies |
3,933 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 16A (Tc) | 10V | 280mOhm @ 10A, 10V | 3.9V @ 675µA | 66 nC @ 10 V | ±20V | 1600 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
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IRF5210STRRPBFMOSFET P-CH 100V 38A D2PAK Infineon Technologies |
3,539 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 38A (Tc) | 10V | 60mOhm @ 38A, 10V | 4V @ 250µA | 230 nC @ 10 V | ±20V | 2780 pF @ 25 V | - | 3.1W (Ta), 170W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
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IRF1607MOSFET N-CH 75V 142A TO220AB Infineon Technologies |
3,441 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 142A (Tc) | 10V | 7.5mOhm @ 85A, 10V | 4V @ 250µA | 320 nC @ 10 V | ±20V | 7750 pF @ 25 V | - | 380W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
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IRL3716SMOSFET N-CH 20V 180A D2PAK Infineon Technologies |
2,378 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79 nC @ 4.5 V | ±20V | 5090 pF @ 10 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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