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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFH6200TR2PBFMOSFET N-CH 20V 100A 5X6 PQFN Infineon Technologies |
3,956 |
|
Tabla de datos |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 49A (Ta), 100A (Tc) | - | 0.95mOhm @ 50A, 10V | 1.1V @ 150µA | 230 nC @ 4.5 V | - | 10890 pF @ 10 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
|
IPB80P03P4L07ATMA2MOSFET_(20V 40V) PG-TO263-3 Infineon Technologies |
2,049 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | P-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 6.9mOhm @ 80A, 10V | 2V @ 130µA | 80 nC @ 10 V | +5V, -16V | 5700 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IRF3805L-7PPBFMOSFET N-CH 55V 160A D2PAK Infineon Technologies |
3,879 |
|
Tabla de datos |
HEXFET® | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 160A (Tc) | 10V | 2.6mOhm @ 140A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7820 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK (7-Lead) |
|
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IRFH5110TR2PBFMOSFET N-CH 100V 5X6 PQFN Infineon Technologies |
4,677 |
|
Tabla de datos |
- | 8-PowerVDFN | Cut Tape (CT) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 63A (Tc) | - | 12.4mOhm @ 37A, 10V | 4V @ 100µA | 72 nC @ 10 V | - | 3152 pF @ 25 V | - | - | - | - | - | Surface Mount | 8-PQFN (5x6) |
|
AUIRF3205ZSTRLMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
2,595 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 6.5mOhm @ 66A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3450 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IPL60R255P6AUMA1MOSFET N-CH 600V 15.9A 4VSON Infineon Technologies |
4,938 |
|
Tabla de datos |
CoolMOS™ P6 | 4-PowerTSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15.9A (Tc) | 10V | 255mOhm @ 6.4A, 10V | 4.5V @ 530µA | 31 nC @ 10 V | ±20V | 1450 pF @ 100 V | - | 126W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-VSON-4 |
|
IPD90P04P405ATMA1MOSFET P-CH 40V 90A TO252-3 Infineon Technologies |
4,854 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 4.7mOhm @ 90A, 10V | 4V @ 250µA | 154 nC @ 10 V | ±20V | 10300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
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IPB60R190P6ATMA1MOSFET N-CH 600V 20.2A D2PAK Infineon Technologies |
4,458 |
|
Tabla de datos |
CoolMOS™ P6 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20.2A (Tc) | 10V | 190mOhm @ 7.6A, 10V | 4.5V @ 630µA | 37 nC @ 10 V | ±20V | 1750 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
BTS113ANKSA1MOSFET N-CH 60V 11.5A TO220AB Infineon Technologies |
2,176 |
|
Tabla de datos |
TEMPFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11.5A (Tc) | 4.5V | 170mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | ±10V | 560 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
|
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BTS113AE3064NKSA1MOSFET N-CH 60V 11.5A TO220AB Infineon Technologies |
2,768 |
|
Tabla de datos |
TEMPFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 11.5A (Tc) | 4.5V | 170mOhm @ 5.8A, 4.5V | 2.5V @ 1mA | - | ±10V | 560 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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