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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPP04CN10NGMOSFET N-CH 100V 100A TO220-3 Infineon Technologies |
3,347 |
|
Tabla de datos |
OptiMOS™ 2 | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 100A (Tc) | 10V | 4.2mOhm @ 100A, 10V | 4V @ 250µA | 210 nC @ 10 V | ±20V | 13800 pF @ 50 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
64-8016MOSFET N-CH 40V 75A TO220AB Infineon Technologies |
4,964 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110 nC @ 5 V | ±16V | 5080 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IRF8302MTRPBFMOSFET N-CH 30V 31A DIRECTFET Infineon Technologies |
4,841 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric MX | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 31A (Ta), 190A (Tc) | 4.5V, 10V | 1.8mOhm @ 31A, 10V | 2.35V @ 150µA | 53 nC @ 4.5 V | ±20V | 6030 pF @ 15 V | - | 2.8W (Ta), 104W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MX |
|
BSC046N10NS3GATMA1MOSFET N-CH 100V 17A/100A TDSON Infineon Technologies |
3,991 |
|
Tabla de datos |
OptiMOS™ 3 | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 17A (Ta), 100A (Tc) | 6V, 10V | 4.6mOhm @ 50A, 10V | 3.5V @ 120µA | 63 nC @ 10 V | ±20V | 4500 pF @ 50 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-7 |
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IPD65R380C6ATMA1MOSFET N-CH 650V 10.6A TO252-3 Infineon Technologies |
3,433 |
|
Tabla de datos |
CoolMOS™ C6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
94-2110MOSFET N-CH 40V 162A D2PAK Infineon Technologies |
3,685 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 162A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
IRF1404LMOSFET N-CH 40V 162A TO262 Infineon Technologies |
2,473 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 162A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200 nC @ 10 V | ±20V | 7360 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IPB034N06L3GATMA1MOSFET N-CH 60V 90A D2PAK Infineon Technologies |
3,303 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.4mOhm @ 90A, 10V | 2.2V @ 93µA | 79 nC @ 4.5 V | ±20V | 13000 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
|
IRF2807LMOSFET N-CH 75V 82A TO262 Infineon Technologies |
3,619 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 82A (Tc) | 10V | 13mOhm @ 43A, 10V | 4V @ 250µA | 160 nC @ 10 V | ±20V | 3820 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
|
IPD80N04S306ATMA1MOSFET N-CH 40V 90A TO252-3 Infineon Technologies |
4,751 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 4V @ 52µA | 47 nC @ 10 V | ±20V | 3250 pF @ 25 V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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