制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPA50R380CEMOSFET N-CH 500V 9.9A TO220-FP Infineon Technologies |
3,361 | - |
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CoolMOS™ | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 9.9A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8 nC @ 10 V | ±20V | 584 pF @ 100 V | - | 29.2W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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SPP07N60S5MOSFET N-CH 650V 7.3A TO220-3 Infineon Technologies |
3,116 | - |
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CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35 nC @ 10 V | ±20V | 970 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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SPI07N60S5HKSA1MOSFET N-CH 600V 7.3A TO262-3 Infineon Technologies |
4,759 | - |
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CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35 nC @ 10 V | ±20V | 970 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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AUIRLS3114ZMOSFET N-CH 40V 56A DPAK Infineon Technologies |
3,448 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 56A (Tc) | 10V | 4.9mOhm @ 56A, 10V | 2.5V @ 100µA | 53 nC @ 4.5 V | ±16V | 3617 pF @ 25 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF6621TR1MOSFET N-CH 30V 12A DIRECTFET Infineon Technologies |
3,962 | - |
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HEXFET® | DirectFET™ Isometric SQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 55A (Tc) | 4.5V, 10V | 9.1mOhm @ 12A, 10V | 2.25V @ 250µA | 17.5 nC @ 4.5 V | ±20V | 1460 pF @ 15 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SQ |
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IRL3714ZSMOSFET N-CH 20V 36A D2PAK Infineon Technologies |
4,869 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 36A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2 nC @ 4.5 V | ±20V | 550 pF @ 10 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFZ44ZMOSFET N-CH 55V 51A TO220AB Infineon Technologies |
3,187 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43 nC @ 10 V | ±20V | 1420 pF @ 25 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IPP12CN10N GMOSFET N-CH 100V 67A TO220-3 Infineon Technologies |
3,814 | - |
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OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 67A (Tc) | 10V | 12.9mOhm @ 67A, 10V | 4V @ 83µA | 65 nC @ 10 V | ±20V | 4320 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRF7807AMOSFET N-CH 30V 8.3A 8SO Infineon Technologies |
2,959 | - |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.3A (Ta) | 4.5V | 25mOhm @ 7A, 4.5V | 1V @ 250µA | 17 nC @ 5 V | ±12V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IPD65R950CFDBTMA1MOSFET N-CH 650V 3.9A TO252-3 Infineon Technologies |
2,472 | - |
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CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.9A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 4.5V @ 200µA | 14.1 nC @ 10 V | ±20V | 380 pF @ 100 V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |