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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPB80N06S2-07MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
2,449 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110 nC @ 10 V | ±20V | 4540 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
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SPB80N06S2L-06MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
3,120 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 6.3mOhm @ 69A, 10V | 2V @ 180µA | 150 nC @ 10 V | ±20V | 5050 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IRL2910PBFMOSFET N-CH 100V 55A TO220AB Infineon Technologies |
3,252 |
|
Tabla de datos |
HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 4V, 10V | 26mOhm @ 29A, 10V | 2V @ 250µA | 140 nC @ 5 V | ±16V | 3700 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPP032N06N3GHKSA1MOSFET N-CH 60V 120A TO220-3 Infineon Technologies |
3,737 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 3.2mOhm @ 100A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IAUC120N06S5N015ATMA1MOSFET_)40V 60V) Infineon Technologies |
4,988 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tj) | 7V, 10V | 1.5mOhm @ 60A, 10V | 3.4V @ 94µA | 96 nC @ 10 V | ±20V | 6952 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-43 |
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IRFR5505TRLPBFMOSFET P-CH 55V 18A DPAK Infineon Technologies |
2,727 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 650 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSC883N03MSGATMA1MOSFET N-CH 34V 19A/98A TDSON Infineon Technologies |
3,939 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 34 V | 19A (Ta), 98A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 10V | 2V @ 250µA | 41 nC @ 10 V | ±20V | 3200 pF @ 15 V | - | 2.5W (Ta), 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
|
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IPD088N06N3GBTMA1MOSFET N-CH 60V 50A TO252-3 Infineon Technologies |
2,168 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 8.8mOhm @ 50A, 10V | 4V @ 34µA | 48 nC @ 10 V | ±20V | 3900 pF @ 30 V | - | 71W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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IRFR6215TRLMOSFET P-CH 150V 13A DPAK Infineon Technologies |
2,110 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
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IRFR6215TRMOSFET P-CH 150V 13A DPAK Infineon Technologies |
2,338 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | ±20V | 860 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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