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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7420TRPBFMOSFET P-CH 12V 11.5A 8SO Infineon Technologies |
3,970 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 11.5A (Tc) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38 nC @ 4.5 V | ±8V | 3529 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF7404QTRPBFMOSFET P-CH 20V 6.7A 8-SOIC Infineon Technologies |
2,438 |
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Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.7A (Ta) | - | 40mOhm @ 3.2A, 4.5V | 700mV @ 250µA (Min) | 50 nC @ 4.5 V | - | 1500 pF @ 15 V | - | - | - | - | - | Surface Mount | 8-SO |
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IPP80N04S404AKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
4,501 |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4.6mOhm @ 80A, 10V | 4V @ 35µA | 43 nC @ 10 V | ±20V | 3440 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPP200N15N3GHKSA1MOSFET N-CH 150V 50A TO220-3 Infineon Technologies |
4,625 |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 50A (Tc) | 8V, 10V | 20mOhm @ 50A, 10V | 4V @ 90µA | 31 nC @ 10 V | ±20V | 1820 pF @ 75 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPD70N10S3L12ATMA2MOSFET_(75V 120V( Infineon Technologies |
4,620 |
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Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 70A (Tc) | 4.5V, 10V | 11.5mOhm @ 70A, 10V | 2.4V @ 83µA | 77 nC @ 10 V | ±20V | 5550 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
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IRF7450TRMOSFET N-CH 200V 2.5A 8SO Infineon Technologies |
2,274 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.5A (Ta) | 10V | 170mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39 nC @ 10 V | ±30V | 940 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IRF6665MOSFET N-CH 100V 4.2A DIRECTFET Infineon Technologies |
2,692 |
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Tabla de datos |
- | DirectFET™ Isometric SH | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ SH |
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SPP80N06S2L-07MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
2,856 |
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Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 2V @ 150µA | 130 nC @ 10 V | ±20V | 4210 pF @ 25 V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IRF3717TRMOSFET N-CH 20V 20A 8SO Infineon Technologies |
2,264 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 20A (Ta) | 4.5V, 10V | 4.4mOhm @ 20A, 10V | 2.45V @ 250µA | 33 nC @ 4.5 V | ±20V | 2890 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IAUA200N04S5N010ATMA1MOSFET_(20V 40V) Infineon Technologies |
3,061 |
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Tabla de datos |
OptiMOS™ 5 | 5-PowerSFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 200A (Tc) | 7V, 10V | 1mOhm @ 100A, 10V | 3.4V @ 100µA | 132 nC @ 10 V | ±20V | 7650 pF @ 25 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-1 |
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