制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IQE036N08NM6ATMA1TRENCH 40<-<100V Infineon Technologies |
2,032 | - |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPB075N04LGATMA1MOSFET N-CH 40V 50A D2PAK Infineon Technologies |
4,671 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 50A, 10V | 2V @ 20µA | 36 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRFHM9331TR2PBFMOSFET P-CH 30V 11A 3X3 PQFN Infineon Technologies |
4,904 | - |
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- | 8-PowerTDFN | Cut Tape (CT) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 24A (Tc) | - | 10mOhm @ 11A, 20V | 2.4V @ 25µA | 48 nC @ 10 V | - | 1543 pF @ 25 V | - | - | - | - | - | Surface Mount | PQFN (3x3) |
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IRFH7914TRPBFMOSFET N-CH 30V 15A/35A 8PQFN Infineon Technologies |
2,504 | - |
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HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 15A (Ta), 35A (Tc) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1160 pF @ 15 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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IRFR6215CPBFMOSFET P-CH 150V 13A DPAK Infineon Technologies |
4,814 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 150 V | 13A (Tc) | - | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66 nC @ 10 V | - | 860 pF @ 25 V | - | 110W (Tc) | - | - | - | Surface Mount | TO-252AA (DPAK) |
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IPI070N08N3 GMOSFET N-CH 80V 80A TO262-3 Infineon Technologies |
2,166 | - |
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OptiMOS™ 3 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 7mOhm @ 73A, 10V | 3.5V @ 73µA | 56 nC @ 10 V | ±20V | 3840 pF @ 40 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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IRF1010NLPBFMOSFET N-CH 55V 85A TO262 Infineon Technologies |
2,827 | - |
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HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 3210 pF @ 25 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IRF3709STRLMOSFET N-CH 30V 90A D2PAK Infineon Technologies |
3,252 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41 nC @ 5 V | ±20V | 2672 pF @ 16 V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
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94-3250MOSFET N-CH 30V 12A DIRECTFET Infineon Technologies |
2,780 | - |
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HEXFET® | DirectFET™ Isometric MQ | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 49A (Tc) | 4.5V, 7V | 11.5mOhm @ 12A, 7V | 2.1V @ 250µA | 26 nC @ 4.5 V | ±12V | 2270 pF @ 15 V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MQ |
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IRF6608MOSFET N-CH 30V 13A DIRECTFET Infineon Technologies |
2,143 | - |
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HEXFET® | DirectFET™ Isometric ST | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 55A (Tc) | 4.5V, 10V | 9mOhm @ 13A, 10V | 3V @ 250µA | 24 nC @ 4.5 V | ±12V | 2120 pF @ 15 V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ ST |