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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BS7067N06LS3GMOSFET N-CH 60V 14A/20A 8TSDSON Infineon Technologies |
4,613 |
|
Tabla de datos |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Ta), 20A (Tc) | 4.5V, 10V | 6.7mOhm @ 20A, 10V | 2.2V @ 35µA | 62 nC @ 10 V | ±20V | 4800 pF @ 30 V | - | 2.1W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
|
IRFR3504ZTRLPBFMOSFET N-CH 40V 42A DPAK Infineon Technologies |
3,754 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 42A (Tc) | 10V | 9mOhm @ 42A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 1510 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
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IRLR014NTRMOSFET N-CH 55V 10A DPAK Infineon Technologies |
3,914 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 10A (Tc) | 4.5V, 10V | 140mOhm @ 6A, 10V | 1V @ 250µA | 7.9 nC @ 5 V | ±16V | 265 pF @ 25 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IRF520NLPBFMOSFET N-CH 100V 9.7A TO262 Infineon Technologies |
4,104 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.7A (Tc) | 10V | 200mOhm @ 5.7A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 3.8W (Ta), 48W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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IPAW60R280P7SE8228XKSA1MOSFET N-CH 600V 12A TO220 Infineon Technologies |
2,469 |
|
- |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 24W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
SPU04N60S5BKMA1MOSFET N-CH 600V 4.5A TO251-3 Infineon Technologies |
3,554 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 5.5V @ 200µA | 22.9 nC @ 10 V | ±20V | 580 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
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IRFHM8334TRPBFMOSFET N-CH 30V 13A 8PQFN Infineon Technologies |
3,195 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta) | 4.5V, 10V | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15 nC @ 10 V | ±20V | 1180 pF @ 10 V | - | 2.7W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3.3x3.3), Power33 |
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IRFHM8235TRPBFMOSFET N-CH 25V 16A 8PQFN Infineon Technologies |
3,965 |
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Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 16A (Ta) | 4.5V, 10V | 7.7mOhm @ 20A, 10V | 2.35V @ 25µA | 12 nC @ 4.5 V | ±20V | 1040 pF @ 10 V | - | 3W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3.3x3.3), Power33 |
|
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IPD60R1K0CEATMA1MOSFET N-CH 600V 4.3A TO252-3 Infineon Technologies |
2,238 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.3A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 37W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPB05N03LBMOSFET N-CH 30V 80A TO263-3 Infineon Technologies |
3,216 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 60A, 10V | 2V @ 40µA | 25 nC @ 5 V | ±20V | 3209 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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