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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRLR4343-701PBFMOSFET N-CH 55V 26A IPAK Infineon Technologies |
4,732 |
|
Tabla de datos |
HEXFET® | TO-252-4, DPAK (3 Leads + Tab) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42 nC @ 10 V | ±20V | 740 pF @ 50 V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | - | - | Surface Mount | I-PAK (LF701) |
|
IPD35N12S3L24ATMA2MOSFET_(120V 300V) Infineon Technologies |
2,667 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 35A (Tc) | 4.5V, 10V | 24mOhm @ 35A, 10V | 2.4V @ 39µA | 39 nC @ 10 V | ±20V | 2691 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
|
BSC032N03SMOSFET N-CH 30V 23A/100A TDSON Infineon Technologies |
4,988 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 30 V | 23A (Ta), 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 50A, 10V | 2V @ 70µA | 39 nC @ 5 V | ±20V | 5080 pF @ 15 V | - | 2.8W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
|
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IPD35N10S3L26ATMA2MOSFET_(75V 120V( Infineon Technologies |
3,958 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 24mOhm @ 35A, 10V | 2.4V @ 39µA | 39 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
|
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BSB104N08NP3GXUMA1TRENCH 40<-<100V Infineon Technologies |
2,228 |
|
Tabla de datos |
- | DirectFET™ Isometric MP | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 13A (Ta), 50A (Tc) | 10V | 10.4mOhm @ 10A, 10V | 3.5V @ 40µA | 31 nC @ 10 V | ±20V | 2100 pF @ 40 V | - | 2.8W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2-6 |
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IPP039N04LGXKSA1MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
3,205 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 80A, 10V | 2V @ 45µA | 78 nC @ 10 V | ±20V | 6100 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
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BSB104N08NP3GXUMA2TRENCH 40<-<100V Infineon Technologies |
4,340 |
|
Tabla de datos |
- | DirectFET™ Isometric MP | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 13A (Ta), 50A (Tc) | 10V | 10.4mOhm @ 10A, 10V | 3.5V @ 40µA | 31 nC @ 10 V | ±20V | 2100 pF @ 40 V | - | 2.8W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2-6 |
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IRFR3418TRLPBFMOSFET N-CH 80V 70A DPAK Infineon Technologies |
3,769 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 70A (Tc) | 10V | 14mOhm @ 18A, 10V | 5.5V @ 250µA | 94 nC @ 10 V | ±20V | 3510 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRF7433TRMOSFET P-CH 12V 8.9A 8SO Infineon Technologies |
2,532 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 8.9A (Ta) | 1.8V, 4.5V | 24mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20 nC @ 4.5 V | ±8V | 1877 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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BSC090N03MSGATMA1MOSFET N-CH 30V 12A/48A 8TDSON Infineon Technologies |
2,567 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta), 48A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2V @ 250µA | 24 nC @ 10 V | ±20V | 1900 pF @ 15 V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-5 |
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