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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF7451PBFMOSFET N-CH 150V 3.6A 8SO Infineon Technologies |
2,539 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 3.6A (Ta) | 10V | 90mOhm @ 2.2A, 10V | 5.5V @ 250µA | 41 nC @ 10 V | ±30V | 990 pF @ 25 V | - | 2.5W (Ta) | - | - | - | Surface Mount | 8-SO |
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IRF9410TRPBFMOSFET N-CH 30V 7A 8SO Infineon Technologies |
4,565 |
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Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 7A (Ta) | 4.5V, 10V | 30mOhm @ 7A, 10V | 1V @ 250µA | 27 nC @ 10 V | ±20V | 550 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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SPD07N20GBTMA1MOSFET N-CH 200V 7A TO252-3 Infineon Technologies |
3,022 |
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Tabla de datos |
SIPMOS® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | 31.5 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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BSO064N03SMOSFET N-CH 30V 12A 8DSO Infineon Technologies |
3,072 |
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Tabla de datos |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 6.4mOhm @ 16A, 10V | 2V @ 50µA | 28 nC @ 5 V | ±20V | 3620 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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IRLZ24NLPBFMOSFET N-CH 55V 18A TO262 Infineon Technologies |
3,982 |
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Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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BSC085N025S GMOSFET N-CH 25V 14A/35A TDSON Infineon Technologies |
2,150 |
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Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 14A (Ta), 35A (Tc) | 4.5V, 10V | 8.5mOhm @ 35A, 10V | 2V @ 25µA | 14 nC @ 5 V | ±20V | 1800 pF @ 15 V | - | 2.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
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IRLMS2002MOSFET N-CH 20V 6.5A MICRO6 Infineon Technologies |
2,809 |
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Tabla de datos |
HEXFET® | SOT-23-6 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 6.5A (Ta) | 2.5V, 4.5V | 30mOhm @ 6.5A, 4.5V | 1.2V @ 250µA | 22 nC @ 5 V | ±12V | 1310 pF @ 15 V | - | 2W (Ta) | - | - | - | Surface Mount | Micro6™(SOT23-6) |
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IRFR220NCPBFMOSFET N-CH 200V 5A DPAK Infineon Technologies |
2,540 |
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Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5A (Ta) | 10V | 600mOhm @ 2.9A, 10V | 4V @ 250µA | 23 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPD12CNE8N GMOSFET N-CH 85V 67A TO252-3 Infineon Technologies |
2,144 |
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Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 85 V | 67A (Tc) | 10V | 12.4mOhm @ 67A, 10V | 4V @ 83µA | 64 nC @ 10 V | ±20V | 4340 pF @ 40 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPP60R600P7XKSA1MOSFET N-CH 650V 6A TO220-3 Infineon Technologies |
2,400 |
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Tabla de datos |
CoolMOS™ P7 | TO-220-3 | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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