制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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BSB104N08NP3GXUSA1MOSFET N-CH 80V 13A/50A 2WDSON Infineon Technologies |
2,139 | - |
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OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80 V | 13A (Ta), 50A (Tc) | 10V | 10.4mOhm @ 10A, 10V | 3.5V @ 40µA | 31 nC @ 10 V | ±20V | 2100 pF @ 40 V | - | 2.8W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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IRF3704ZSTRRPBFMOSFET N-CH 20V 67A D2PAK Infineon Technologies |
3,242 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 67A (Tc) | 4.5V, 10V | 7.9mOhm @ 21A, 10V | 2.55V @ 250µA | 13 nC @ 4.5 V | ±20V | 1220 pF @ 10 V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRFR3303CPBFMOSFET N-CH 30V 33A DPAK Infineon Technologies |
2,412 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 33A (Tc) | 10V | 31mOhm @ 18A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IRFR5505CPBFMOSFET P-CH 55V 18A DPAK Infineon Technologies |
3,336 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±20V | 650 pF @ 25 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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BSP299 E6327MOSFET N-CH 500V 400MA SOT223-4 Infineon Technologies |
4,956 | - |
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SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 400mA (Ta) | 10V | 4Ohm @ 400mA, 10V | 4V @ 1mA | - | ±20V | 400 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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IRF200B211XKMA1TRENCH >=100V Infineon Technologies |
4,278 | - |
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- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 12A (Tc) | 10V | 170mOhm @ 7.2A, 10V | 4.9V @ 50µA | 23 nC @ 10 V | ±20V | 790 pF @ 50 V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-904 |
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SPD50N06S2L-13MOSFET N-CH 55V 50A TO252-3 Infineon Technologies |
3,052 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 50A (Tc) | 4.5V, 10V | 12.7mOhm @ 34A, 10V | 2V @ 80µA | 69 nC @ 10 V | ±20V | 2300 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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BUZ73MOSFET N-CH 200V 7A TO220-3 Infineon Technologies |
3,685 | - |
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SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 7A (Tc) | 10V | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRL3714ZPBFMOSFET N-CH 20V 36A TO220AB Infineon Technologies |
3,415 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 36A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2 nC @ 4.5 V | ±20V | 550 pF @ 10 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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BSC052N03S GMOSFET N-CH 30V 18A/80A TDSON Infineon Technologies |
4,304 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 18A (Ta), 80A (Tc) | 4.5V, 10V | 5.2mOhm @ 50A, 10V | 2V @ 40µA | 22 nC @ 5 V | ±20V | 2820 pF @ 15 V | - | 2.8W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-6 |