制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPI80CN10N GMOSFET N-CH 100V 13A TO262-3 Infineon Technologies |
4,271 | - |
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OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 80mOhm @ 13A, 10V | 4V @ 12µA | 11 nC @ 10 V | ±20V | 716 pF @ 50 V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
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SPD30N08S2L-21MOSFET N-CH 75V 30A TO252-3 Infineon Technologies |
4,949 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 30A (Tc) | 4.5V, 10V | 20.5mOhm @ 25A, 10V | 2V @ 80µA | 72 nC @ 10 V | ±20V | 2130 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPF05N03LA GMOSFET N-CH 25V 50A TO252-3 Infineon Technologies |
4,573 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 50A (Tc) | 4.5V, 10V | 5.1mOhm @ 30A, 10V | 2V @ 50µA | 25 nC @ 5 V | ±20V | 3110 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-23 |
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BSF077N06NT3GXUMA1MOSFET N-CH 60V 13A/56A 2WDSON Infineon Technologies |
4,751 | - |
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OptiMOS™ | 3-WDSON | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 13A (Ta), 56A (Tc) | 10V | 7.7mOhm @ 30A, 10V | 4V @ 33µA | 46 nC @ 10 V | ±20V | 3700 pF @ 30 V | - | 2.2W (Ta), 38W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
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IRFZ44EPBFMOSFET N-CH 60V 48A TO220AB Infineon Technologies |
2,036 | - |
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HEXFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1360 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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BSL207SPL6327HTSA1MOSFET P-CH 20V 6A TSOP-6 Infineon Technologies |
3,984 | - |
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OptiMOS™ | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Ta) | 2.5V, 4.5V | 41mOhm @ 6A, 4.5V | 1.2V @ 40µA | 20 nC @ 4.5 V | ±12V | 1007 pF @ 15 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSOP6-6 |
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BSP315PL6327HTSA1MOSFET P-CH 60V 1.17A SOT223-4 Infineon Technologies |
3,948 | - |
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SIPMOS® | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.17A (Ta) | 4.5V, 10V | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8 nC @ 10 V | ±20V | 160 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4-21 |
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BSZ105N04NSGATMA1MOSFET N-CH 40V 11A/40A 8TSDSON Infineon Technologies |
2,075 | - |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 11A (Ta), 40A (Tc) | 10V | 10.5mOhm @ 20A, 10V | 4V @ 14µA | 17 nC @ 10 V | ±20V | 1300 pF @ 20 V | - | 2.1W (Ta), 35W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
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IRFHM8342TRPBFMOSFET N-CH 30V 10A 8PQFN Infineon Technologies |
3,072 | - |
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HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 16mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5 nC @ 4.5 V | ±20V | 560 pF @ 25 V | - | 2.6W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (3.3x3.3), Power33 |
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IAUC120N06S5N022ATMA1MOSFET_)40V 60V) Infineon Technologies |
2,046 | - |
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OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tj) | 7V, 10V | 2.24mOhm @ 60A, 10V | 3.4V @ 65µA | 68 nC @ 10 V | ±20V | 4930 pF @ 30 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-34 |