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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SPP10N10LMOSFET N-CH 100V 10.3A TO220-3 Infineon Technologies |
3,986 |
|
Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 10.3A (Tc) | 4.5V, 10V | 154mOhm @ 8.1A, 10V | 2V @ 21µA | 22 nC @ 10 V | ±20V | 444 pF @ 25 V | - | 50W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPU95R1K2P7AKMA1MOSFET N-CH 950V 6A TO251-3 Infineon Technologies |
3,467 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15 nC @ 10 V | ±20V | 478 pF @ 400 V | - | 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
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IPU80R750P7AKMA1MOSFET N-CH 800V 7A TO251-3 Infineon Technologies |
3,375 |
|
Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | 3.5V @ 140µA | 17 nC @ 10 V | ±20V | 460 pF @ 500 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
IPAN70R450P7SXKSA1MOSFET N-CH 700V 10A TO220 Infineon Technologies |
4,698 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 10A (Tc) | 10V | 450mOhm @ 2.3A, 10V | 3.5V @ 120µA | 13.1 nC @ 10 V | ±16V | 424 pF @ 400 V | - | 22.7W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRF9Z24NLPBFMOSFET P-CH 55V 12A TO262 Infineon Technologies |
2,157 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 55 V | 12A (Tc) | 10V | 175mOhm @ 7.2A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
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IPP084N06L3GHKSA1MOSFET N-CH 60V 50A TO220-3 Infineon Technologies |
3,988 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 8.4mOhm @ 50A, 10V | 2.2V @ 34µA | 29 nC @ 4.5 V | ±20V | 4900 pF @ 30 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IRFHM8329TRPBFMOSFET N-CH 30V 16A/57A PQFN Infineon Technologies |
4,414 |
|
Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 57A (Tc) | 4.5V, 10V | 6.1mOhm @ 20A, 10V | 2.2V @ 25µA | 26 nC @ 10 V | ±20V | 1710 pF @ 10 V | - | 2.6W (Ta), 33W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (3x3) |
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IPN50R950CEATMA1MOSFET N-CH 500V 6.6A SOT223 Infineon Technologies |
3,544 |
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Tabla de datos |
CoolMOS™ CE | TO-261-4, TO-261AA | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 6.6A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 231 pF @ 100 V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |
|
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IPP034N03LGHKSA1MOSFET N-CH 30V 80A TO220-3 Infineon Technologies |
2,120 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 80A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.2V @ 250µA | 25 nC @ 4.5 V | ±20V | 5300 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
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IRL3714ZLPBFMOSFET N-CH 20V 36A TO262 Infineon Technologies |
3,653 |
|
Tabla de datos |
HEXFET® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 36A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2 nC @ 4.5 V | ±20V | 550 pF @ 10 V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
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