制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPD80R4K5P7ATMA1MOSFET N-CH 800V 1.5A TO252 Infineon Technologies |
4,993 | - |
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CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.5A (Tc) | 10V | 4.5Ohm @ 400mA, 10V | 3.5V @ 200µA | 4 nC @ 10 V | ±20V | 80 pF @ 500 V | - | 13W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPP023N04NGXKSA1MOSFET N-CH 40V 90A TO220-3 Infineon Technologies |
4,642 | - |
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OptiMOS™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 2.3mOhm @ 90A, 10V | 4V @ 95µA | 120 nC @ 10 V | ±20V | 10000 pF @ 20 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPAN80R360P7XKSA1MOSFET N-CH 800V 13A TO220 Infineon Technologies |
3,449 | - |
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CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30 nC @ 10 V | ±20V | 930 pF @ 500 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPA65R190C7XKSA1MOSFET N-CH 650V 8A TO220-FP Infineon Technologies |
3,549 | - |
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CoolMOS™ C7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 8A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23 nC @ 10 V | ±20V | 1150 pF @ 400 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPA032N06N3GXKSA1MOSFET N-CH 60V 84A TO220-3-31 Infineon Technologies |
2,044 | - |
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OptiMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 84A (Tc) | 10V | 3.2mOhm @ 80A, 10V | 4V @ 118µA | 165 nC @ 10 V | ±20V | 13000 pF @ 30 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IPD90N04S4L04ATMA1MOSFET N-CH 40V 90A TO252-3 Infineon Technologies |
2,086 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 4.5V, 10V | 3.8mOhm @ 90A, 10V | 2.2V @ 35µA | 60 nC @ 10 V | +20V, -16V | 4690 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
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IPI024N06N3GXKSA1MOSFET N-CH 60V 120A TO262-3 Infineon Technologies |
4,083 | - |
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OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4V @ 196µA | 275 nC @ 10 V | ±20V | 23000 pF @ 30 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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IPLK70R750P7ATMA1MOSFET N-CH 700V TDSON-8 Infineon Technologies |
2,517 | - |
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CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 |
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IPA80R310CEXKSA2MOSFET N-CH 800V 16.7A TO220-FP Infineon Technologies |
3,274 | - |
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CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 16.7A (Tc) | 10V | 310mOhm @ 11A, 10V | 3.9V @ 1mA | 91 nC @ 10 V | ±20V | 2320 pF @ 100 V | - | 35W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IPLK80R2K0P7ATMA1MOSFET 800V TDSON-8 Infineon Technologies |
4,262 | - |
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CoolMOS™ P7 | 8-PowerTDFN | Tape & Reel (TR) | Active | - | MOSFET (Metal Oxide) | 800 V | - | - | - | - | - | ±20V | - | - | - | - | - | - | Surface Mount | PG-TDSON-8 |