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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFH8303TRPBFMOSFET N-CH 30V 43A/100A 8PQFN Infineon Technologies |
1,121 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 43A (Ta), 100A (Tc) | 4.5V, 10V | 1.1mOhm @ 50A, 10V | 2.2V @ 150µA | 179 nC @ 10 V | ±20V | 7736 pF @ 24 V | - | 3.7W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
BSZ010NE2LS5ATMA1MOSFET N-CH 25V 32A/40A TSDSON Infineon Technologies |
3,523 |
|
Tabla de datos |
OptiMOS™ 5 | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 32A (Ta), 40A (Tc) | 4.5V, 10V | 1mOhm @ 20A, 10V | 2V @ 250µA | 29 nC @ 4.5 V | ±16V | 3900 pF @ 12 V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-34 |
|
IRLR3636TRLPBFMOSFET N-CH 60V 50A DPAK Infineon Technologies |
705 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 6.8mOhm @ 50A, 10V | 2.5V @ 100µA | 49 nC @ 4.5 V | ±16V | 3779 pF @ 50 V | - | 143W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
BSC120N12LSGATMA1TRENCH >=100V PG-TDSON-8 Infineon Technologies |
2,427 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 10A (Ta), 68A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 2.4V @ 72µA | 51 nC @ 10 V | ±20V | 4900 pF @ 60 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8 |
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IPB65R660CFDAATMA1MOSFET N-CH 650V 6A D2PAK Infineon Technologies |
4,016 |
|
Tabla de datos |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 3.2A, 10V | 4.5V @ 200µA | 20 nC @ 10 V | ±20V | 543 pF @ 100 V | - | 62.5W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
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IPB054N08N3GATMA1MOSFET N-CH 80V 80A D2PAK Infineon Technologies |
3,633 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 80 V | 80A (Tc) | 6V, 10V | 5.4mOhm @ 80A, 10V | 3.5V @ 90µA | 69 nC @ 10 V | ±20V | 4750 pF @ 40 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
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IRF100B202MOSFET N-CH 100V 97A TO220AB Infineon Technologies |
1,919 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 97A (Tc) | 10V | 8.6mOhm @ 58A, 10V | 4V @ 150µA | 116 nC @ 10 V | ±20V | 4476 pF @ 50 V | - | 221W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
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BSZ014NE2LS5IFATMA1MOSFET N-CH 25V 31A/40A TSDSON Infineon Technologies |
26,690 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 31A (Ta), 40A (Tc) | 4.5V, 10V | 1.45mOhm @ 20A, 10V | 2V @ 250µA | 33 nC @ 10 V | ±16V | 2300 pF @ 12 V | Schottky Diode (Body) | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8-FL |
|
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IPD60R280CFD7ATMA1MOSFET N-CH 600V 9A TO252-3 Infineon Technologies |
4,544 |
|
Tabla de datos |
CoolMOS™ CFD7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 18 nC @ 10 V | ±20V | 807 pF @ 400 V | - | 51W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
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SPD08N50C3ATMA1MOSFET N-CH 500V 7.6A TO252-3 Infineon Technologies |
12,119 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32 nC @ 10 V | ±20V | 750 pF @ 25 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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