制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IRFR2307ZTRLPBFMOSFET N-CH 75V 42A DPAK Infineon Technologies |
7,703 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 42A (Tc) | 10V | 16mOhm @ 32A, 10V | 4V @ 100µA | 75 nC @ 10 V | ±20V | 2190 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
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IPD11DP10NMATMA1TRENCH >=100V PG-TO252-3 Infineon Technologies |
3,796 | - |
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OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3.4A (Ta), 22A (Tc) | 10V | 111mOhm @ 18A, 10V | 4V @ 1.7mA | 74 nC @ 10 V | ±20V | 3200 pF @ 50 V | - | 3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD028N06NF2SATMA1TRENCH 40<-<100V Infineon Technologies |
1,490 | - |
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StrongIRFET™2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Ta), 139A (Tc) | 6V, 10V | 2.85mOhm @ 70A, 10V | 3.3V @ 80µA | 102 nC @ 10 V | ±20V | 4600 pF @ 30 V | - | 3W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPP050N10NF2SAKMA1TRENCH >=100V Infineon Technologies |
917 | - |
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StrongIRFET™ 2 | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 19.4A (Ta), 110A (Tc) | 6V, 10V | 5mOhm @ 60A, 10V | 3.8V @ 84µA | 76 nC @ 10 V | ±20V | 3600 pF @ 50 V | - | 3.8W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
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IPB80N06S4L07ATMA2MOSFET N-CH 60V 80A TO263-3 Infineon Technologies |
1,423 | - |
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OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 80A, 10V | 2.2V @ 40µA | 75 nC @ 10 V | ±16V | 5680 pF @ 25 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
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IPA95R1K2P7XKSA1MOSFET N-CH 950V 6A TO220 Infineon Technologies |
484 | - |
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CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 6A (Tc) | 10V | 1.2Ohm @ 2.7A, 10V | 3.5V @ 140µA | 15 nC @ 10 V | ±20V | 478 pF @ 400 V | - | 27W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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IRFB7537PBFMOSFET N-CH 60V 173A TO220AB Infineon Technologies |
3,801 | - |
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HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 173A (Tc) | 6V, 10V | 3.3mOhm @ 100A, 10V | 3.7V @ 150µA | 210 nC @ 10 V | ±20V | 7020 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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IRFH7004TRPBFMOSFET N-CH 40V 100A 8PQFN Infineon Technologies |
3,690 | - |
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HEXFET®, StrongIRFET™ | 8-VQFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 194 nC @ 10 V | ±20V | 6419 pF @ 25 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
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SPD04N80C3ATMA1MOSFET N-CH 800V 4A TO252-3 Infineon Technologies |
10,800 | - |
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CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4A (Tc) | 10V | 1.3Ohm @ 2.5A, 10V | 3.9V @ 240µA | 31 nC @ 10 V | ±20V | 570 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD055N08NF2SATMA1MOSFET Infineon Technologies |
1,240 | - |
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StrongIRFET™ 2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 17A (Ta), 98A (Tc) | 6V, 10V | 5.5mOhm @ 60A, 10V | 3.8V @ 55µA | 54 nC @ 10 V | ±20V | 2500 pF @ 40 V | - | 3W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |