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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPA95R750P7XKSA1MOSFET N-CH 950V 9A TO220 Infineon Technologies |
429 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 9A (Tc) | 10V | 750mOhm @ 4.5A, 10V | 3.5V @ 220µA | 23 nC @ 10 V | ±20V | 712 pF @ 400 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPB018N06NF2SATMA1TRENCH 40<-<100V Infineon Technologies |
243 |
|
Tabla de datos |
StrongIRFET™2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 34A (Ta), 187A (Tc) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3.3V @ 129µA | 162 nC @ 10 V | ±20V | 7300 pF @ 30 V | - | 3.8W (Ta), 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
IPB35N10S3L26ATMA1MOSFET N-CH 100V 35A D2PAK Infineon Technologies |
3,411 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 26.3mOhm @ 35A, 10V | 2.4V @ 39µA | 39 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3 |
|
|
IPP015N04NF2SAKMA1TRENCH PG-TO220-3 Infineon Technologies |
797 |
|
Tabla de datos |
* | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IPA80R450P7XKSA1MOSFET N-CH 800V 11A TO220-3F Infineon Technologies |
203 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 11A (Tc) | 10V | 450mOhm @ 4.5A, 10V | 3.5V @ 220µA | 24 nC @ 10 V | ±20V | 770 pF @ 500 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
|
IRFSL7437PBFMOSFET N-CH 40V 195A TO262 Infineon Technologies |
2,365 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 195A (Tc) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3.9V @ 150µA | 225 nC @ 10 V | ±20V | 7330 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 |
|
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IRF1010ZSTRLPBFMOSFET N-CH 55V 75A D2PAK Infineon Technologies |
1,859 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 7.5mOhm @ 75A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IRF6613TRPBFMOSFET N-CH 40V 23A DIRECTFET Infineon Technologies |
8,349 |
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Tabla de datos |
HEXFET® | DirectFET™ Isometric MT | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 23A (Ta), 150A (Tc) | 4.5V, 10V | 3.4mOhm @ 23A, 10V | 2.25V @ 250µA | 63 nC @ 4.5 V | ±20V | 5950 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ MT |
|
IAUA180N04S5N012AUMA1MOSFET N-CH 40V 180A HSOF-5-1 Infineon Technologies |
3,375 |
|
Tabla de datos |
OptiMOS™ 5 | 5-PowerSFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 180A (Tc) | 7V, 10V | 1.2mOhm @ 90A, 10V | 3.4V @ 70µA | 100 nC @ 10 V | ±20V | 6158 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-HSOF-5-2 |
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IPA95R450PFD7XKSA1MOSFET N-CH 950V 7.2A TO220-3 Infineon Technologies |
161 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 950 V | 7.2A (Tc) | 10V | 450mOhm @ 7.2A, 10V | 3.5V @ 360µA | 43 nC @ 10 V | ±20V | 1230 pF @ 400 V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-313 |
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