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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPD30N08S2L21ATMA1MOSFET N-CH 75V 30A TO252-3 Infineon Technologies |
19,366 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 75 V | 30A (Tc) | 4.5V, 10V | 20.5mOhm @ 25A, 10V | 2V @ 80µA | 72 nC @ 10 V | ±20V | 1650 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
SPA06N80C3XKSA1MOSFET N-CH 800V 6A TO220-FP Infineon Technologies |
11,995 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 900mOhm @ 3.8A, 10V | 3.9V @ 250µA | 41 nC @ 10 V | ±20V | 785 pF @ 100 V | - | 39W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
|
IRFH5210TRPBFMOSFET N-CH 100V 10A/55A 8PQFN Infineon Technologies |
8,349 |
|
Tabla de datos |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Ta), 55A (Tc) | 10V | 14.9mOhm @ 33A, 10V | 4V @ 100µA | 59 nC @ 10 V | ±20V | 2570 pF @ 25 V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
IPI086N10N3GXKSA1MOSFET N-CH 100V 80A TO262-3 Infineon Technologies |
242 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 6V, 10V | 8.6mOhm @ 73A, 10V | 3.5V @ 75µA | 55 nC @ 10 V | ±20V | 3980 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
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IPD65R660CFDAATMA1MOSFET N-CH 650V 6A TO252-3 Infineon Technologies |
4,536 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 3.22A, 10V | 4.5V @ 214.55µA | 20 nC @ 10 V | ±20V | 543 pF @ 100 V | - | 62.5W (Tc) | -40°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3 |
|
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IPD65R380E6ATMA1MOSFET N-CH 650V 10.6A TO252-3 Infineon Technologies |
477 |
|
Tabla de datos |
CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 650 V | 10.6A (Tc) | 10V | 380mOhm @ 3.2A, 10V | 3.5V @ 320µA | 39 nC @ 10 V | ±20V | 710 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
BSP135H6906XTSA1MOSFET N-CH 600V 120MA SOT223-4 Infineon Technologies |
14,161 |
|
Tabla de datos |
SIPMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 600 V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9 nC @ 5 V | ±20V | 146 pF @ 25 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-SOT223-4 |
|
|
IRFH5250TRPBFMOSFET N-CH 25V 45A/100A 8PQFN Infineon Technologies |
9,000 |
|
Tabla de datos |
HEXFET® | 8-PowerVDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 45A (Ta), 100A (Tc) | 4.5V, 10V | 1.15mOhm @ 50A, 10V | 2.35V @ 150µA | 110 nC @ 10 V | ±20V | 7174 pF @ 13 V | - | 3.6W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-PQFN (5x6) |
|
IPA60R380P6XKSA1MOSFET N-CH 600V 10.6A TO220-FP Infineon Technologies |
437 |
|
Tabla de datos |
CoolMOS™ P6 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 4.5V @ 320µA | 19 nC @ 10 V | ±20V | 877 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
|
IPA80R600P7XKSA1MOSFET N-CHANNEL 800V 8A TO220 Infineon Technologies |
398 |
|
Tabla de datos |
CoolMOS™ P7 | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20 nC @ 10 V | ±20V | 570 pF @ 500 V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
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