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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSC020N03MSGATMA1MOSFET N-CH 30V 25A/100A TDSON Infineon Technologies |
31,901 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 25A (Ta), 100A (Tc) | 4.5V, 10V | 2mOhm @ 30A, 10V | 2V @ 250µA | 124 nC @ 10 V | ±20V | 9600 pF @ 15 V | - | 2.5W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TDSON-8-1 |
|
SPD04N50C3ATMA1MOSFET N-CH 500V 4.5A TO252-3 Infineon Technologies |
4,534 |
|
Tabla de datos |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 22 nC @ 10 V | ±20V | 470 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IRFR1010ZTRPBFMOSFET N-CH 55V 42A DPAK Infineon Technologies |
6,063 |
|
Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 42A (Tc) | 10V | 7.5mOhm @ 42A, 10V | 4V @ 100µA | 95 nC @ 10 V | ±20V | 2840 pF @ 25 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IPN80R600P7ATMA1MOSFET N-CH 800V 8A SOT223 Infineon Technologies |
2,007 |
|
Tabla de datos |
CoolMOS™ P7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 8A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 3.5V @ 170µA | 20 nC @ 10 V | ±20V | 570 pF @ 500 V | - | 7.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |
|
IRFB7540PBFMOSFET N-CH 60V 110A TO220 Infineon Technologies |
203 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 6V, 10V | 5.1mOhm @ 65A, 10V | 3.7V @ 100µA | 130 nC @ 10 V | ±20V | 4555 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220 |
|
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IPD50N06S2L13ATMA2MOSFET N-CH 55V 50A TO252-31 Infineon Technologies |
4,787 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 50A (Tc) | 4.5V, 10V | 12.7mOhm @ 34A, 10V | 2V @ 80µA | 69 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IPB057N06NATMA1MOSFET N-CH 60V 17A/45A D2PAK Infineon Technologies |
395 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Ta), 45A (Tc) | 6V, 10V | 5.7mOhm @ 45A, 10V | 2.8V @ 36µA | 27 nC @ 10 V | ±20V | 2000 pF @ 30 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3 |
|
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IPD35N12S3L24ATMA1MOSFET N-CH 120V 35A TO252-3 Infineon Technologies |
8,588 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 35A (Tc) | 4.5V, 10V | 24mOhm @ 35A, 10V | 2.4V @ 39µA | 39 nC @ 10 V | ±20V | 2700 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPAN60R280PFD7SXKSA1CONSUMER PG-TO220-3 Infineon Technologies |
2,779 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.6A, 10V | 4.5V @ 180µA | 15.3 nC @ 10 V | ±20V | 656 pF @ 400 V | - | 24W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IRFIZ44NPBFMOSFET N-CH 55V 31A TO220AB FP Infineon Technologies |
165 |
|
Tabla de datos |
HEXFET® | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 31A (Tc) | 10V | 24mOhm @ 17A, 10V | 4V @ 250µA | 65 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB Full-Pak |
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