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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPB70N12S311ATMA1MOSFET N-CHANNEL_100+ Infineon Technologies |
4,572 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 70A (Tc) | 4.5V, 10V | 12.1mOhm @ 70A, 10V | 2.4V @ 83µA | 77 nC @ 10 V | ±20V | 5550 pF @ 25 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO263-3-2 |
|
IPDH4N03LAGMOSFET N-CH 25V 90A TO252-3 Infineon Technologies |
2,390 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 90A (Tc) | 4.5V, 10V | 4.2mOhm @ 60A, 10V | 2V @ 40µA | 26 nC @ 5 V | ±20V | 3200 pF @ 15 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
IPP65R280C6XKSA1MOSFET N-CH 650V 13.8A TO220-3 Infineon Technologies |
2,305 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45 nC @ 10 V | ±20V | 950 pF @ 100 V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
|
IPP037N06L3GXKSA1MOSFET N-CH 60V 90A TO220-3 Infineon Technologies |
444 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 93µA | 79 nC @ 4.5 V | ±20V | 13000 pF @ 30 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
IPI50R250CPXKSA1MOSFET N-CH 500V 13A TO262-3 Infineon Technologies |
3,142 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 250mOhm @ 7.8A, 10V | 3.5V @ 520µA | 36 nC @ 10 V | ±20V | 1420 pF @ 100 V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
IPB04N03LATMOSFET N-CH 25V 80A TO263-3 Infineon Technologies |
498 |
|
Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 80A (Tc) | 4.5V, 10V | 3.9mOhm @ 55A, 10V | 2V @ 60µA | 32 nC @ 5 V | ±20V | 3877 pF @ 15 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
IPI80N04S404AKSA1MOSFET N-CH 40V 80A TO262-3 Infineon Technologies |
2,737 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4.6mOhm @ 80A, 10V | 4V @ 35µA | 43 nC @ 10 V | ±20V | 3440 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
|
|
SPP12N50C3XKSA1LOW POWER_LEGACY Infineon Technologies |
4,096 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.6A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 49 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
SPI12N50C3XKSA1MOSFET N-CH 560V 11.6A TO262-3 Infineon Technologies |
2,186 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 560 V | 11.6A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 49 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
SPI12N50C3INN-CHANNEL POWER MOSFET Infineon Technologies |
928 |
|
Tabla de datos |
CoolMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 11.6A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 49 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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