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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IPI80N06S405AKSA2MOSFET N-CHANNEL_55/60V Infineon Technologies |
3,365 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 10V | 5.7mOhm @ 80A, 10V | 4V @ 60µA | 81 nC @ 10 V | ±20V | 6500 pF @ 25 V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO262-3-1 |
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BSB012N03LX3GN-CHANNEL POWER MOSFET Infineon Technologies |
5,508 |
|
Tabla de datos |
OptiMOS™ | 3-WDSON | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 39A (Ta), 180A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | 2.2V @ 250µA | 169 nC @ 10 V | ±20V | 16900 pF @ 15 V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | MG-WDSON-2, CanPAK M™ |
|
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BSB012N03LX3GXUMA1N-CHANNEL POWER MOSFET Infineon Technologies |
4,398 |
|
Tabla de datos |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRL3803STRRPBFMOSFET N-CH 30V 140A D2PAK Infineon Technologies |
3,095 |
|
Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 140A (Tc) | 4.5V, 10V | 6mOhm @ 71A, 10V | 1V @ 250µA | 140 nC @ 4.5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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IPA50R350CPXKSA1MOSFET N-CH 500V 10A TO220-FP Infineon Technologies |
3,383 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 10A (Tc) | 10V | 350mOhm @ 5.6A, 10V | 3.5V @ 370µA | 25 nC @ 10 V | ±20V | 1020 pF @ 100 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
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IPP80N06S2L09AKSA2MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
3,992 |
|
Tabla de datos |
OptiMOS™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 52A, 10V | 2V @ 125µA | 105 nC @ 10 V | ±20V | 2620 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IRF6706S2TR1PBFMOSFET N-CH 25V 17A DIRECTFET Infineon Technologies |
838 |
|
Tabla de datos |
HEXFET® | DirectFET™ Isometric S1 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 17A (Ta), 63A (Tc) | 4.5V, 10V | 3.8mOhm @ 17A, 10V | 2.35V @ 25µA | 20 nC @ 4.5 V | ±20V | 1810 pF @ 13 V | - | 1.8W (Ta), 26W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric S1 |
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SPP80N06S08AKSA1MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
3,394 |
|
Tabla de datos |
SIPMOS® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 80A, 10V | 4V @ 250µA | 187 nC @ 10 V | ±20V | 3660 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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IPD90N04S3H4ATMA1MOSFET N-CH 40V 90A TO252-3 Infineon Technologies |
2,751 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 40 V | 90A (Tc) | 10V | 4.3mOhm @ 90A, 10V | 4V @ 65µA | 60 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
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IPI80N04S2H4AKSA2MOSFET N-CH 40V 80A TO262-3 Infineon Technologies |
7,500 |
|
Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 3.7mOhm @ 80A, 10V | 4V @ 250µA | 148 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
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