制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPB80N04S3H4ATMA1MOSFET N-CH 40V 80A TO263-3 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4.5mOhm @ 80A, 10V | 4V @ 65µA | 60 nC @ 10 V | ±20V | 3900 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
![]() |
IPP139N08N3GN-CHANNEL POWER MOSFET Infineon Technologies |
11,261 | - |
|
![]() Tabla de datos |
OptiMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 45A (Tc) | 6V, 10V | 13.9mOhm @ 45A, 10V | 3.5V @ 33µA | 25 nC @ 10 V | ±20V | 1730 pF @ 40 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3 |
|
BUZ31H3046XKSA1MOSFET N-CH 200V 14.5A TO262-3 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
SIPMOS® | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 14.5A (Tc) | 5V | 200mOhm @ 9A, 5V | 4V @ 1mA | - | ±20V | 1120 pF @ 25 V | - | 95W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
![]() |
BSO051N03MS GMOSFET N-CH 30V 14A 8DSO Infineon Technologies |
2,168 | - |
|
![]() Tabla de datos |
OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 5.1mOhm @ 18A, 10V | 2V @ 250µA | 55 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
![]() |
SPD30N03S2L07GBTMA1MOSFET N-CH 30V 30A TO252-3 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 6.7mOhm @ 30A, 10V | 2V @ 85µA | 68 nC @ 10 V | ±20V | 2530 pF @ 25 V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
![]() |
IPS60R400CEAKMA1CONSUMER Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
CoolMOS™ CE | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 14.7A (Tj) | 10V | 400mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32 nC @ 10 V | ±20V | 700 pF @ 100 V | - | 112W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
![]() |
SPA07N60C2N-CHANNEL POWER MOSFET Infineon Technologies |
1,403 | - |
|
![]() Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35 nC @ 10 V | ±20V | 970 pF @ 25 V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-31 |
![]() |
IPA60R280P7SE8228XKSA1MOSFET N-CH 600V 12A TO220 Infineon Technologies |
0 | - |
|
- |
CoolMOS™ P7 | TO-220-3 Full Pack | Bulk | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Tc) | 10V | 280mOhm @ 3.8A, 10V | 4V @ 190µA | 18 nC @ 10 V | ±20V | 761 pF @ 400 V | - | 24W (Tc) | -40°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
IPI100N04S4H2AKSA1MOSFET N-CH 40V 100A TO262-3 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 100A (Tc) | 10V | 2.7mOhm @ 100A, 10V | 4V @ 70µA | 90 nC @ 10 V | ±20V | 7180 pF @ 25 V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3 |
![]() |
IPP90N06S404AKSA1MOSFET N-CH 60V 90A TO220-3 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 90A (Tc) | 10V | 4mOhm @ 90A, 10V | 4V @ 90µA | 128 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |