制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRFR3711TRPBFMOSFET N-CH 20V 100A DPAK Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 100A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 3V @ 250µA | 44 nC @ 4.5 V | ±20V | 2980 pF @ 10 V | - | 2.5W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA (DPAK) |
|
IPU80R1K2P7AKMA1MOSFET N-CH 800V 4.5A TO251-3 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.5A (Tc) | 10V | 1.2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11 nC @ 10 V | ±20V | 300 pF @ 500 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
![]() |
IPS80R1K2P7AKMA1MOSFET N-CH 800V 4.5A TO251-3 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
CoolMOS™ P7 | TO-251-3 Stub Leads, IPAK | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.5A (Tc) | 10V | 1.2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 11 nC @ 10 V | ±20V | 300 pF @ 500 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-342 |
![]() |
IRL3103STRLPBFMOSFET N-CH 30V 64A D2PAK Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33 nC @ 4.5 V | ±16V | 1650 pF @ 25 V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
![]() |
SPS04N60C3AKMA1N-CHANNEL POWER MOSFET Infineon Technologies |
101,415 | - |
|
![]() Tabla de datos |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IPU95R2K0P7AKMA1MOSFET N-CH 950V 4A TO251-3 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
CoolMOS™ P7 | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 950 V | 4A (Tc) | 10V | 2Ohm @ 1.7A, 10V | 3.5V @ 80µA | 10 nC @ 10 V | ±20V | 330 pF @ 400 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
![]() |
IPI084N06L3GXKSA1MOSFET N-CH 60V 50A TO262-3 Infineon Technologies |
0 | - |
|
![]() Tabla de datos |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 4.5V, 10V | 8.4mOhm @ 50A, 10V | 2.2V @ 34µA | 29 nC @ 4.5 V | ±20V | 4900 pF @ 30 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
![]() |
BSC882N03MSGN-CHANNEL POWER MOSFET Infineon Technologies |
23,996 | - |
|
![]() Tabla de datos |
OptiMOS™ 3 | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 34 V | 22A (Ta), 100A (Tc) | 4.5V, 10V | 2.6mOhm @ 30A, 10V | 2V @ 250µA | 55 nC @ 10 V | ±20V | 4300 pF @ 15 V | - | 2.5W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
![]() |
IRLML2402TRPBFMOSFET N-CH 20V 1.2A SOT23 Infineon Technologies |
11,869 | - |
|
![]() Tabla de datos |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.2A (Ta) | 2.7V, 4.5V | 250mOhm @ 930mA, 4.5V | 700mV @ 250µA (Min) | 3.9 nC @ 4.5 V | ±12V | 110 pF @ 15 V | - | 540mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Micro3™/SOT-23 |
![]() |
SPP02N60S5N-CHANNEL POWER MOSFET Infineon Technologies |
4,500 | - |
|
![]() Tabla de datos |
CoolMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 5.5V @ 80µA | 9.5 nC @ 10 V | ±20V | 240 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |