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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    FDMD8260LET60

    FDMD8260LET60

    MOSFET 2N-CH 60V 15A 12POWER

    onsemi

    2,099
    RFQ
    FDMD8260LET60

    Tabla de datos

    PowerTrench® 12-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 15A 5.8mOhm @ 15A, 10V 3V @ 250µA 68nC @ 10V 5245pF @ 30V 1.1W -55°C ~ 175°C (TJ) - - Surface Mount 12-Power3.3x5
    ALD212908APAL

    ALD212908APAL

    MOSFET 2N-CH 10.6V 0.08A 8PDIP

    Advanced Linear Devices Inc.

    4,084
    RFQ
    ALD212908APAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD310704PCL

    ALD310704PCL

    MOSFET 4P-CH 8V 16PDIP

    Advanced Linear Devices Inc.

    3,119
    RFQ
    ALD310704PCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
    ALD310708PCL

    ALD310708PCL

    MOSFET 4P-CH 8V 16PDIP

    Advanced Linear Devices Inc.

    4,346
    RFQ
    ALD310708PCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 780mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
    ALD1101BPAL

    ALD1101BPAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    4,369
    RFQ
    ALD1101BPAL

    Tabla de datos

    - 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD1102BPAL

    ALD1102BPAL

    MOSFET 2P-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    3,808
    RFQ
    ALD1102BPAL

    Tabla de datos

    - 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD110808ASCL

    ALD110808ASCL

    MOSFET 4N-CH 10.6V 16SOIC

    Advanced Linear Devices Inc.

    3,932
    RFQ
    ALD110808ASCL

    Tabla de datos

    EPAD® 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 810mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD114804APCL

    ALD114804APCL

    MOSFET 4N-CH 10.6V 16PDIP

    Advanced Linear Devices Inc.

    3,237
    RFQ
    ALD114804APCL

    Tabla de datos

    EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    IRF7530TR

    IRF7530TR

    MOSFET 2N-CH 20V 5.4A MICRO8

    Infineon Technologies

    2,391
    RFQ
    IRF7530TR

    Tabla de datos

    HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 5.4A 30mOhm @ 5.4A, 4.5V 1.2V @ 250µA 26nC @ 4.5V 1310pF @ 15V 1.3W -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
    SD5000N PDIP 16L ROHS

    SD5000N PDIP 16L ROHS

    MOSFET 4N-CH 20V 0.05A 16DIP

    Linear Integrated Systems, Inc.

    3,244
    RFQ
    SD5000N PDIP 16L ROHS

    Tabla de datos

    - 16-DIP (0.300", 7.62mm) Obsolete MOSFET (Metal Oxide) 4 N-Channel - 20V 50mA (Ta) 70Ohm @ 1mA, 5V 1.5V @ 1µA - - 500mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole 16-DIP
    SMA5118

    SMA5118

    MOSFET 6N-CH 500V 5A 12SIP

    Sanken Electric USA Inc.

    8
    RFQ
    SMA5118

    Tabla de datos

    - 12-SIP Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 500V 5A 1.4Ohm @ 2.5A, 10V 4V @ 1mA - 770pF @ 10V 4W 150°C (TJ) - - Through Hole 12-SIP
    SMA5112

    SMA5112

    MOSFET 6N-CH 250V 7A 12SIP

    Sanken Electric USA Inc.

    4,045
    RFQ
    SMA5112

    Tabla de datos

    - 12-SIP Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 250V 7A 500mOhm @ 3.5A, 10V 4V @ 1mA - 450pF @ 10V 4W 150°C (TJ) - - Through Hole 12-SIP
    ALD110808APCL

    ALD110808APCL

    MOSFET 4N-CH 10.6V 16PDIP

    Advanced Linear Devices Inc.

    2,493
    RFQ
    ALD110808APCL

    Tabla de datos

    EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 810mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    SLA5037

    SLA5037

    MOSFET 4N-CH 100V 10A 12SIP

    Sanken Electric USA Inc.

    4,334
    RFQ
    SLA5037

    Tabla de datos

    - 12-SIP Exposed Tab Tube Active MOSFET (Metal Oxide) 4 N-Channel Logic Level Gate 100V 10A 80mOhm @ 5A, 10V 2V @ 250mA - 1630pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
    ALD310702APCL

    ALD310702APCL

    MOSFET 4P-CH 8V 16PDIP

    Advanced Linear Devices Inc.

    3,186
    RFQ
    ALD310702APCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
    ALD310704APCL

    ALD310704APCL

    MOSFET 4P-CH 8V 16PDIP

    Advanced Linear Devices Inc.

    3,931
    RFQ
    ALD310704APCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
    ALD310708APCL

    ALD310708APCL

    MOSFET 4P-CH 8V 16PDIP

    Advanced Linear Devices Inc.

    2,096
    RFQ
    ALD310708APCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 780mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Through Hole 16-PDIP
    SLA5041

    SLA5041

    MOSFET 4N-CH 200V 10A 12SIP

    Sanken Electric USA Inc.

    2,687
    RFQ
    SLA5041

    Tabla de datos

    - 12-SIP Exposed Tab Tube Active MOSFET (Metal Oxide) 4 N-Channel Logic Level Gate 200V 10A 175mOhm @ 5A, 10V 4V @ 1mA - 850pF @ 10V 5W 150°C (TJ) - - Through Hole 12-SIP
    EPC2100ENGRT

    EPC2100ENGRT

    MOSFET 2N-CH 30V 10A DIE

    EPC

    2,147
    RFQ
    EPC2100ENGRT

    Tabla de datos

    eGaN® Die Tape & Reel (TR) Obsolete GaNFET (Gallium Nitride) 2 N-Channel (Half Bridge) - 30V 10A (Ta), 40A (Ta) 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V 2.5V @ 4mA, 2.5V @ 16mA 4.9nC @ 15V, 19nC @ 15V 475pF @ 15V, 1960pF @ 15V - -40°C ~ 150°C (TJ) - - Surface Mount Die
    ALD1101APAL

    ALD1101APAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    3,677
    RFQ
    ALD1101APAL

    Tabla de datos

    - 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V - 75Ohm @ 5V 1V @ 10µA - 10pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
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