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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    ALD1102APAL

    ALD1102APAL

    MOSFET 2P-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    3,942
    RFQ
    ALD1102APAL

    Tabla de datos

    - 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - 270Ohm @ 5V 1.2V @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    TC8020K6-G-M937

    TC8020K6-G-M937

    MOSFET 6N/6P-CH 200V 56QFN

    Microchip Technology

    3,680
    RFQ
    TC8020K6-G-M937

    Tabla de datos

    - 56-VFQFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 6 N and 6 P-Channel - 200V - 8Ohm @ 1A, 10V 2.4V @ 1mA - 50pF @ 25V - -55°C ~ 150°C (TJ) - - Surface Mount 56-QFN (8x8)
    SMA5113

    SMA5113

    MOSFET 4N-CH 450V 7A 12SIP

    Sanken Electric USA Inc.

    4,575
    RFQ
    SMA5113

    Tabla de datos

    - 12-SIP Tube Active MOSFET (Metal Oxide) 4 N-Channel - 450V 7A (Ta) 1.1Ohm @ 3.5A, 10V 4V @ 1mA - 720pF @ 10V 4W (Ta), 35W (Tc) 150°C - - Through Hole 12-SIP
    FMP76-01T

    FMP76-01T

    MOSFET N/P-CH 100V 54A I4-PAC

    IXYS

    3,832
    RFQ

    -

    - ISOPLUSi5-PAK™ Tube Obsolete MOSFET (Metal Oxide) N and P-Channel, Common Drain - 100V 54A (Tc), 62A (Tc) 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V 4V @ 250µA, 4.5V @ 250µA 197nC @ 10V, 104nC @ 10V 1370pF @ 25V, 5080pF @ 25V 89W, 132W -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    IRF7509TR

    IRF7509TR

    MOSFET N/P-CH 30V 2.7A/2A MICRO8

    Infineon Technologies

    3,436
    RFQ
    IRF7509TR

    Tabla de datos

    HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 2.7A, 2A 110mOhm @ 1.4A, 10V 1V @ 250µA 12nC @ 10V 210pF @ 25V 1.25W -55°C ~ 150°C (TJ) - - Surface Mount Micro8™
    FMP26-02P

    FMP26-02P

    MOSFET N/P-CH 200V 26A I4-PAC

    IXYS

    3,684
    RFQ

    -

    Polar™ i4-Pac™-5 Tube Obsolete MOSFET (Metal Oxide) N and P-Channel - 200V 26A, 17A 60mOhm @ 25A, 10V 5V @ 250µA 70nC @ 10V 2720pF @ 25V 125W -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    FMP36-015P

    FMP36-015P

    MOSFET N/P-CH 150V 36A I4-PAC

    IXYS

    3,112
    RFQ

    -

    Polar™ i4-Pac™-5 Tube Obsolete MOSFET (Metal Oxide) N and P-Channel - 150V 36A, 22A 40mOhm @ 31A, 10V 5.5V @ 250µA 70nC @ 10V 2250pF @ 25V 125W -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    IRF7501TR

    IRF7501TR

    MOSFET 2N-CH 20V 2.4A MICRO8

    Infineon Technologies

    2,508
    RFQ
    IRF7501TR

    Tabla de datos

    - 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 2.4A 135mOhm @ 1.7A, 4.5V 700mV @ 250µA 8nC @ 4.5V 260pF @ 15V 1.25W - - - Surface Mount Micro8™
    IRF7507TR

    IRF7507TR

    MOSFET N/P-CH 20V 2.4A MICRO8

    Infineon Technologies

    4,208
    RFQ
    IRF7507TR

    Tabla de datos

    - 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 2.4A, 1.7A 140mOhm @ 1.7A, 4.5V 700mV @ 250µA 8nC @ 4.5V 260pF @ 15V 1.25W - - - Surface Mount Micro8™
    IRF7503TR

    IRF7503TR

    MOSFET 2N-CH 30V 2.4A MICRO8

    Infineon Technologies

    2,510
    RFQ
    IRF7503TR

    Tabla de datos

    - 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 2.4A 135mOhm @ 1.7A, 10V 1V @ 250µA 12nC @ 10V 210pF @ 25V 1.25W - - - Surface Mount Micro8™
    IXTL2X180N10T

    IXTL2X180N10T

    MOSFET 2N-CH 100V 100A I5-PAK

    Littelfuse Inc.

    3,931
    RFQ
    IXTL2X180N10T

    Tabla de datos

    Trench ISOPLUSi5-PAK™ Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 100V 100A 7.4mOhm @ 50A, 10V 4.5V @ 250µA 151nC @ 10V 6900pF @ 25V 150W -55°C ~ 175°C (TJ) - - Through Hole ISOPLUSi5-Pak™
    FMM50-025TF

    FMM50-025TF

    MOSFET 2N-CH 250V 30A I4-PAC

    IXYS

    4,123
    RFQ

    -

    HiPerFET™ i4-Pac™-5 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 250V 30A 50mOhm @ 25A, 10V 4.5V @ 250µA 78nC @ 10V 4000pF @ 25V 125W -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    FMM60-02TF

    FMM60-02TF

    MOSFET 2N-CH 200V 33A I4-PAC

    IXYS

    3,819
    RFQ

    -

    HiPerFET™ i4-Pac™-5 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 200V 33A 40mOhm @ 30A, 10V 4.5V @ 250µA 90nC @ 10V 3700pF @ 25V 125W -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    GWM100-01X1-SMD

    GWM100-01X1-SMD

    MOSFET 6N-CH 100V 90A ISOPLUS

    IXYS

    4,730
    RFQ

    -

    - 17-SMD, Gull Wing Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 100V 90A 8.5mOhm @ 80A, 10V 4.5V @ 250µA 90nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount ISOPLUS-DIL™
    GWM120-0075P3

    GWM120-0075P3

    MOSFET 6N-CH 75V 118A ISOPLUS

    IXYS

    4,190
    RFQ
    GWM120-0075P3

    Tabla de datos

    - 17-SMD, Flat Leads Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 75V 118A 5.5mOhm @ 60A, 10V 4V @ 1mA 100nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount ISOPLUS-DIL™
    GWM160-0055P3

    GWM160-0055P3

    MOSFET 6N-CH 55V 160A ISOPLUS

    IXYS

    4,760
    RFQ

    -

    - 17-SMD, Flat Leads Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 55V 160A 3mOhm @ 100A, 10V 4V @ 1mA 90nC @ 10V - - -40°C ~ 175°C (TJ) - - Surface Mount ISOPLUS-DIL™
    GWM100-01X1-SL

    GWM100-01X1-SL

    MOSFET 6N-CH 100V 90A ISOPLUS

    IXYS

    3,228
    RFQ

    -

    - 17-SMD, Flat Leads Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 100V 90A 8.5mOhm @ 80A, 10V 4.5V @ 250µA 90nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount ISOPLUS-DIL™
    GWM160-0055X1-SL

    GWM160-0055X1-SL

    MOSFET 6N-CH 55V 150A ISOPLUS

    IXYS

    2,861
    RFQ

    -

    - 17-SMD, Flat Leads Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 55V 150A 3.3mOhm @ 100A, 10V 4.5V @ 1mA 105nC @ 10V - - -55°C ~ 175°C (TJ) - - Surface Mount ISOPLUS-DIL™
    FMM22-05PF

    FMM22-05PF

    MOSFET 2N-CH 500V 13A I4-PAC

    IXYS

    2,621
    RFQ

    -

    HiPerFET™, PolarHT™ i4-Pac™-5 Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 500V 13A 270mOhm @ 11A, 10V 5V @ 1mA 50nC @ 10V 2630pF @ 25V 132W -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS i4-PAC™
    GWM70-01P2

    GWM70-01P2

    MOSFET 6N-CH 100V 70A ISOPLUS

    IXYS

    2,525
    RFQ

    -

    - 17-SMD, Flat Leads Tube Obsolete MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 100V 70A 14mOhm @ 35A, 10V 4V @ 1mA 110nC @ 10V - - -40°C ~ 175°C (TJ) - - Surface Mount ISOPLUS-DIL™
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