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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    ALD1110EPAL

    ALD1110EPAL

    MOSFET 2N-CH 10V 8PDIP

    Advanced Linear Devices Inc.

    3,921
    RFQ
    ALD1110EPAL

    Tabla de datos

    EPAD® 8-DIP (0.300", 7.62mm) Tube Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10V - 500Ohm @ 5V 1.01V @ 1µA - 2.5pF @ 5V 600mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD1110ESAL

    ALD1110ESAL

    MOSFET 2N-CH 10V 8SOIC

    Advanced Linear Devices Inc.

    3,409
    RFQ
    ALD1110ESAL

    Tabla de datos

    EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10V - 500Ohm @ 5V 1.01V @ 1µA - 2.5pF @ 5V 600mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD110808PCL

    ALD110808PCL

    MOSFET 4N-CH 10.6V 16PDIP

    Advanced Linear Devices Inc.

    3,282
    RFQ
    ALD110808PCL

    Tabla de datos

    EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    ALD310700SCL

    ALD310700SCL

    MOSFET 4P-CH 8V 16SOIC

    Advanced Linear Devices Inc.

    4,183
    RFQ
    ALD310700SCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 20mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
    ALD310702SCL

    ALD310702SCL

    MOSFET 4P-CH 8V 16SOIC

    Advanced Linear Devices Inc.

    3,068
    RFQ
    ALD310702SCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 180mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
    ALD310704SCL

    ALD310704SCL

    MOSFET 4P-CH 8V 16SOIC

    Advanced Linear Devices Inc.

    3,794
    RFQ
    ALD310704SCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 P-Channel, Matched Pair - 8V - - 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C - - Surface Mount 16-SOIC
    ALD114935PAL

    ALD114935PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    4,764
    RFQ
    ALD114935PAL

    Tabla de datos

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 540Ohm @ 0V 3.45V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    FDMD8280

    FDMD8280

    MOSFET 2N-CH 80V 11A 12POWER

    onsemi

    4,437
    RFQ

    -

    PowerTrench® 12-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 11A 8.2mOhm @ 11A, 10V 4V @ 250µA 44nC @ 10V 3050pF @ 40V 1W -55°C ~ 150°C (TJ) - - Surface Mount 12-Power3.3x5
    ALD114904ASAL

    ALD114904ASAL

    MOSFET 2N-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    2,893
    RFQ
    ALD114904ASAL

    Tabla de datos

    EPAD® 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 3.6V 380mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD210802PCL

    ALD210802PCL

    MOSFET 4N-CH 10.6V 0.08A 16PDIP

    Advanced Linear Devices Inc.

    2,157
    RFQ
    ALD210802PCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    ALD210804PCL

    ALD210804PCL

    MOSFET 4N-CH 10.6V 0.08A 16PDIP

    Advanced Linear Devices Inc.

    3,105
    RFQ
    ALD210804PCL

    Tabla de datos

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    ALD210814PCL

    ALD210814PCL

    MOSFET 4N-CH 10.6V 0.08A 16PDIP

    Advanced Linear Devices Inc.

    4,053
    RFQ

    -

    EPAD®, Zero Threshold™ 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - - - - - Through Hole 16-PDIP
    ALD212900ASAL

    ALD212900ASAL

    MOSFET 2N-CH 10.6V 0.08A 8SOIC

    Advanced Linear Devices Inc.

    2,951
    RFQ
    ALD212900ASAL

    Tabla de datos

    EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA 14Ohm 10mV @ 20µA - 30pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD110802PCL

    ALD110802PCL

    MOSFET 4N-CH 10.6V 16PDIP

    Advanced Linear Devices Inc.

    3,596
    RFQ
    ALD110802PCL

    Tabla de datos

    EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V - 500Ohm @ 4.2V 220mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    ALD110804PCL

    ALD110804PCL

    MOSFET 4N-CH 10.6V 16PDIP

    Advanced Linear Devices Inc.

    4,128
    RFQ
    ALD110804PCL

    Tabla de datos

    EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.4V 420mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    ALD110814PCL

    ALD110814PCL

    MOSFET 4N-CH 10.6V 16PDIP

    Advanced Linear Devices Inc.

    4,849
    RFQ
    ALD110814PCL

    Tabla de datos

    EPAD® 16-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 16-PDIP
    SLA5068 LF853

    SLA5068 LF853

    MOSFET 6N-CH 60V 7A 15SIP

    Sanken Electric USA Inc.

    3,861
    RFQ
    SLA5068 LF853

    Tabla de datos

    - 15-SIP Tube Active MOSFET (Metal Oxide) 6 N-Channel (3-Phase Bridge) - 60V 7A 100mOhm @ 3.5A, 10V 2V @ 250µA - 660pF @ 10V 5W 150°C (TJ) - - Through Hole 15-SIP
    ALD1102BSAL

    ALD1102BSAL

    MOSFET 2P-CH 10.6V 8SOIC

    Advanced Linear Devices Inc.

    2,756
    RFQ
    ALD1102BSAL

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Matched Pair - 10.6V - - - - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD1101BSAL

    ALD1101BSAL

    MOSFET 2N-CH 10.6V 0.04A 8SOIC

    Advanced Linear Devices Inc.

    3,201
    RFQ
    ALD1101BSAL

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 40mA - - - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD212914SAL

    ALD212914SAL

    MOSFET 2N-CH 10.6V 0.08A 8SOIC

    Advanced Linear Devices Inc.

    2,737
    RFQ

    -

    EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - - - Surface Mount 8-SOIC
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